Patents by Inventor Jan Weyher

Jan Weyher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate for surface enhanced raman scattering studies
    Patent number: 8531660
    Abstract: The invention relates to a substrate for surface enhanced Raman scattering studies comprising a semiconductor surface with whiskers, coated with metal selected from the group consisting of silver, gold, platinum, copper and/or alloys thereof, where the semiconductor mentioned is a gallium-containing nitride and essentially each whisker contains a linear defect inside.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: September 10, 2013
    Assignees: Instytut Chemi Fizycznej Polskiel Akademii Nauk, Instytut Wysokich Cisnien Polskiej Akademii Nauk
    Inventors: Igor Dziecielewski, Robert Holyst, Agnieszka Kaminska, Sylwester Porowski, Tadeusz Suski, Jan Weyher
  • SUBSTRATE FOR SURFACE ENHANCED RAMAN SCATTERING STUDIES
    Publication number: 20110235031
    Abstract: The invention relates to a substrate for surface enhanced Raman scattering studies comprising a semiconductor surface with whiskers, coated with metal selected from the group consisting of silver, gold, platinum, copper and/or alloys thereof, where the semiconductor mentioned is a gallium-containing nitride and essentially each whisker contains a linear defect inside.
    Type: Application
    Filed: March 18, 2011
    Publication date: September 29, 2011
    Applicants: INSTYTUT CHEMII FIZYCZNEJ POLSKIEJ AKADEMII NAUK, INSTYTUT WYSOKICH CISNIEN POLSKIEJ AKADEMII NAUK
    Inventors: Igor Dziecielewski, Robert Holyst, Agnieszka Kaminska, Sylwester Porowski, Tadeusz Suski, Jan Weyher
  • Mechano-chemical polishing of crystals and epitaxial layers of GaN and Ga1-x-yA1xInyN
    Patent number: 6399500
    Abstract: This method of removal of irregularities and highly defected regions of the surface of crystals and epitaxial layers of GaN and Ga1−x−yAlxInyN characterized by mechano-chemical polishing on the soft polishing pad under pressure in presence of chemical etching agent of water solution of bases of the total concentration above 0.01N in time longer than 10 seconds after which the agent is replaced by the pure water without interruption of the polishing and polishing by at least 1 minute aid subsequent diminution of the load and stopping of the machine and then the polished GaN crystal or GaAlInN epitaxial layer is removed of the polishing machine and dried in the stream of dry nitrogen.
    Type: Grant
    Filed: November 19, 1999
    Date of Patent: June 4, 2002
    Assignee: Centrum Badan Wysokocisnieniowych Pan
    Inventors: Sylwester Porowski, Izabella Grzegory, Jan Weyher, Grzegorz Nowak