Abstract: Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

Abstract: One example discloses an on-chip shielded device, including: a planar structure including a substrate and a passivation layer; an electrical component formed within the substrate and coupled to an input signal path and an output signal path; a first shielding element positioned above the electrical component and the passivation layer; and a second shielding element positioned above the electrical component, the passivation layer and the first shielding element.

Abstract: The current disclosure relates to methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

Abstract: A photovoltaic device includes an electrically-conductive front contact layer; an electrically-conductive back contact layer, the back contact layer being intended to be situated further from a source of incident light than the front contact layer; and a semiconductor-based PIN junction having a substantially amorphous intrinsic silicon layer sandwiched between a P-type doped semiconductor layer and an N-type doped semiconductor layer. The layer of the PIN junction situated closest to the back contact layer is a silicon-germanium alloy layer including at least 2 mol % of germanium.

Abstract: Methods of measuring variation across multiple instances of a pattern on a substrate or substrates after a step in a device manufacturing process are disclosed. In one arrangement, data representing a set of images is received. Each image represents a different instance of the pattern. The set of images are registered relative to each other to superimpose the instances of the pattern. Variation in the pattern is measured using the registered set of images. The pattern comprises a plurality of pattern elements and the registration comprises applying different weightings to two or more of the plurality of pattern elements. The weightings control the extent to which each pattern element contributes to the registration of the set of images. Each weighting is based on an expected variation of the pattern element to which the weighting is applied.

Abstract: An antenna in a lightbulb may include a conductive plane (e.g., a ground plane) that includes an edge-enabled void antenna (EEVA) with the EEVA including a corresponding edge-enabled void isolator (EEVI). Use of both the EEVA and the EEVI allows for a small antenna footprint for incorporation into a lightbulb. Optionally, two EEVAs, each with a corresponding EEVI may be used. Various arrangements are provided to illustrate possible compromises between structural integrity and cooling. Further, by using two EEVAs, diversity reception and transmission is possible, increasing the utility of the lightbulb by expanding directionality of the transmission/reception and/or improving communication through spatial diversity.

Abstract: The invention relates to a method for the anti-corrosion pre-treatment of a plurality of components in series, in which the components of the series are at least partially formed of iron and/or steel, and in which the components of the series each initially undergo a first conversion stage, followed by a rinsing stage and a subsequent second conversion stage, wherein, in the conversion stages, respective acidic aqueous conversion solutions based on compounds of the elements Zr and/or Ti dissolved in water are brought into contact with the components, and, additionally, copper ions are contained in the conversion solution for the second stage.

Abstract: The present disclosure relates to a fiber management device or system for facilitating routing and storing optical fibers. The fiber management device includes a flexible, film-like substrate that has optical fiber management, storing functionality, and splicing functionality all on one film-like substrate. The flexible, film-like substrate can provide a routing path for routing optical fibers onto a flexible planar substrate that can be temporarily supported by, mounted on or attached to the flexible planar substrate. The flexible, film-like substrate can accommodate fibers that are in a multi-fiber (e.g., ribbon) configuration or a single fiber configuration.

Abstract: The invention relates to a lighting unit comprising a power converter for providing a regulated power to a first LED load where the first LED load comprises at least one LED, wherein the first LED load is coupled to the power converter, a series combination of a first capacitor and a first switch coupled in series with each other, wherein the series combination is coupled in parallel with the LED load, wherein the power converter is arranged to operate in a first mode, provide a first amount of the regulated power to the first LED load, and wherein the first switch is closed, and in a second mode, provide a second amount of the regulated power to the first LED load, wherein the second amount of the regulated power to the first LED load is lower than the first amount of the regulated power to the first LED load, and wherein the first switch is opened.

Abstract: A connector assembly that includes a connector that has a ferrule and a latch. The latch is movable about a connection point. The connector assembly also includes a boot that is removably mounted to the connector. The boot is axially slidable to move the latch. The connector assembly also includes a locking assembly to selectively lock the boot from sliding axially relative to the connector.

Abstract: An edge enabled void isolator (EEVI) for antennas is provided. In particular, two or more antennas are separated from one another by respective EEVI to provide isolation between the antennas. This isolation allows the antennas to be placed in close proximity, keeping the footprint of the antenna system relatively small for ease of use in small wireless devices. While two monopole antennas are specifically contemplated, the disclosure may be extended to more than two antennas and these antennas may be monopole, dipole, F, or the like.

Abstract: A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

Abstract: A method for forming a semiconductor device structure is disclosure. The method may include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate, depositing a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric, removing the first work function metal over the PMOS gate dielectric, and depositing a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. Semiconductor device structures including desired metal gate electrodes deposited by the methods of the disclosure are also disclosed.

Abstract: The present invention relates to a tomato plant having improved insect resistance, more specifically whitefly or mite resistance, wherein the plant comprises a SlAT2 gene encoding for an acetyl-CoA-dependent acyltransferase enzyme and an AP2e gene encoding for a APETALA2 ethylene-responsive transcription factor. The present invention further relates to methods for providing a tomato plant having improved insect resistance and the use of a SlAT2 gene in combination with an AP2e gene for providing insect resistant tomato plants.

Abstract: A method for measuring a parameter of interest from a target and associated apparatuses. The method includes obtaining measurement acquisition data relating to measurement of the target and finite-size effect correction data and/or a trained model operable to correct for at least finite-size effects in the measurement acquisition data. At least finite-size effects in the measurement acquisition data is corrected for using the finite-size effect correction data and/or the trained model to obtain corrected measurement data and/or obtain a parameter of interest; and where the correcting does not directly determine the parameter of interest, determining the parameter of interest from the corrected measurement data.

Abstract: The current disclosure relates to methods of depositing a material comprising a transition metal and a halogen on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a layer that comprises a transition metal and a halogen. In the method, transition metal and halogen is deposited on a substrate by a cyclical deposition process, and the method includes providing a substrate in a reactor chamber, providing a transition metal precursor into the reactor chamber in vapor phase, and providing a haloalkane precursor into the reactor chamber in vapor phase to form a material comprising transition metal and halogen on the substrate. The disclosure further relates to a deposition assembly for depositing a material including a transition metal and a halogen on a substrate.

Abstract: According to an aspect there is provided a motor (1) for a personal care device (10). The motor (1) comprises: a stator (2) comprising a stator surface; a rotor (3) comprising a rotor surface disposed opposite the stator surface; and a spacer (4) projecting between the stator surface and the rotor surface so as to define a minimum airgap between the stator (2) and the rotor (3). The spacer (4) is disposed on or at one of the rotor surface and the stator surface, and has a contact surface configured to engage with the other one of the rotor surface and the stator surface.

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

Abstract: A gateway system is described for use as a gateway between a client device and a remote server. The client device may stream a data stream via the gateway system to the remote server for remote processing. The gateway system may receive the data stream and markers which identify respective blocks of packets in the data stream, wherein each identified block of packets is independently processable. In response to an instruction or configuration to effect a migration of the remote processing from the remote server to a further remote server, the gateway system may determine a block of packets in the data stream from which block of packets onwards the further remote server is to start processing the data stream so as to effect or initialize the migration, and when received, stream the determined block of packets and subsequent blocks of packets of the data stream to the further remote server.