Abstract: A programmable activate-precharge cycle are provided for a DRAM device. Activate and precharge signals associated with the activate-precharge cycle are generated on the basis of the programmed rate and precharge time with respect to an internal clock of the DRAM device. The activate and precharge signals are coupled to wordlines of the DRAM device, and switched from one wordline to another under internal or external control. One or more functions of the DRAM device are tested while the activate and precharge signals are coupled to wordline. The manner in which switching the activate and precharge signals from one wordline to another wordline is configured depending on the type of testing to be conducted.

Abstract: A random access memory including an array of memory cells configured to store memory cell data, a first circuit, and a second circuit. The first circuit is configured to compare test data and memory cell data to obtain comparison results. The second circuit is configured to compress the comparison results and store the compressed comparison results.

Abstract: A memory device and methods to exploit extra or dummy wordlines in the memory device, wherein the extra wordlines are not part of a main memory area of the memory device but, when activated, connect their attached memory cells to the bitlines of the main memory area. The extra wordlines are connected to a voltage in such a manner so as to simulate a floating wordline condition. Associated with each extra wordline is a driver circuit that connects the extra wordline to a voltage to allow it to charge up to the voltage, and subsequently disconnects the wordline from the voltage to allow it to float. While the extra wordline is floating, measurements may be made on the memory device to gather data useful for testing production memory chips for floating wordline conditions. According to another aspect, one or more extra wordlines may be activated to connect its attached memory cells to bitlines, thereby increasing the capacitance on the bitlines.

Abstract: A dynamic random access memory including a first dynamic random access memory cell, a second dynamic random access memory cell to be refreshed, a sense amplifier, and a control circuit. The control circuit is configured to isolate the sense amplifier from at least one of the first dynamic random access memory cell and the second dynamic random access memory cell in an idle state and to couple the sense amplifier to only the second dynamic random access memory cell to be refreshed in a refresh state.

Abstract: Embodiments of the invention generally provide methods and systems for increasing the level of parallelism in testing memory devices. A set of test signals provided by a memory tester may be shared by two or more devices under test. A chip selector may be used to select at least one or all the devices sharing a given set of test signals. By sharing test signals between multiple devices, the level of parallel testing may be increased without increasing the pin count and complexity of memory testers and probe cards.

Abstract: A random access memory including first memory cells, second memory cells, a first voltage source, and a second voltage source. The first voltage source is configured to control the first memory cells. The second voltage source is configured to control the second memory cells. Also, the first voltage source is configured to be trimmed independently of the second voltage source to provide a first voltage that reduces leakage from the first memory cells and the second voltage source is configured to be trimmed independently of the first voltage source to provide a second voltage that reduces leakage from the second memory cells.

Abstract: A method and apparatus according to the present invention enable wafer chips to be configured with a single power on and off sequence and further enable a chip parameter to be adjusted during a wafer test without utilizing that sequence. In particular, each wafer chip under test is assigned a unique programmable identification. Once each chip has been assigned a corresponding identification, the chips may each be individually accessible by that identification to provide parameter values to chip registers to configure that chip. The configured chips may be subsequently tested in parallel to evaluate the parameter settings. In addition, the present invention enables chips to share data I/O pins or lines, thereby reducing the quantity of testing machine pins utilized for each chip and enabling a greater quantity of chips to be tested in a parallel fashion.

Abstract: Embodiments of the invention generally provide methods and systems for increasing the level of parallelism in testing memory devices. A set of test signals provided by a memory tester may be shared by two or more devices under test. A chip selector may be used to select at least one or all the devices sharing a given set of test signals. By sharing test signals between multiple devices, the level of parallel testing may be increased without increasing the pin count and complexity of memory testers and probe cards.

Abstract: A random access memory including an array of memory cells configured to store memory cell data, a first circuit, and a second circuit. The first circuit is configured to compare test data and memory cell data to obtain comparison results. The second circuit is configured to compress the comparison results and store the compressed comparison results.

Abstract: A dynamic random access memory including a first dynamic random access memory cell, a second dynamic random access memory cell to be refreshed, a sense amplifier, and a control circuit. The control circuit is configured to isolate the sense amplifier from at least one of the first dynamic random access memory cell and the second dynamic random access memory cell in an idle state and to couple the sense amplifier to only the second dynamic random access memory cell to be refreshed in a refresh state.

Abstract: A random access memory including first memory cells, second memory cells, a first voltage source, and a second voltage source. The first voltage source is configured to control the first memory cells. The second voltage source is configured to control the second memory cells. Also, the first voltage source is configured to be trimmed independently of the second voltage source to provide a first voltage that reduces leakage from the first memory cells and the second voltage source is configured to be trimmed independently of the first voltage source to provide a second voltage that reduces leakage from the second memory cells.

Abstract: A method and apparatus according to the present invention enable wafer chips to be configured with a single power on and off sequence and further enable a chip parameter to be adjusted during a wafer test without utilizing that sequence. In particular, each wafer chip under test is assigned a unique programmable identification. Once each chip has been assigned a corresponding identification, the chips may each be individually accessible by that identification to provide parameter values to chip registers to configure that chip. The configured chips may be subsequently tested in parallel to evaluate the parameter settings. In addition, the present invention enables chips to share data I/O pins or lines, thereby reducing the quantity of testing machine pins utilized for each chip and enabling a greater quantity of chips to be tested in a parallel fashion.

Abstract: A programmable activate-precharge cycle are provided for a DRAM device. Activate and precharge signals associated with the activate-precharge cycle are generated on the basis of the programmed rate and precharge time with respect to an internal clock of the DRAM device. The activate and precharge signals are coupled to wordlines of the DRAM device, and switched from one wordline to another under internal or external control. One or more functions of the DRAM device are tested while the activate and precharge signals are coupled to wordline. The manner in which switching the activate and precharge signals from one wordline to another wordline is configured depending on the type of testing to be conducted.

Abstract: A memory device and methods to exploit extra or dummy wordlines in the memory device, wherein the extra wordlines are not part of a main memory area of the memory device but, when activated, connect their attached memory cells to the bitlines of the main memory area. The extra wordlines are connected to a voltage in such a manner so as to simulate a floating wordline condition. Associated with each extra wordline is a driver circuit that connects the extra wordline to a voltage to allow it to charge up to the voltage, and subsequently disconnects the wordline from the voltage to allow it to float. While the extra wordline is floating, measurements may be made on the memory device to gather data useful for testing production memory chips for floating wordline conditions. According to another aspect, one or more extra wordlines may be activated to connect its attached memory cells to bitlines, thereby increasing the capacitance on the bitlines.

Abstract: A memory device and methods to exploit extra or dummy wordlines in the memory device, wherein the extra wordlines are not part of a main memory area of the memory device but, when activated, connect their attached memory cells to the bitlines of the main memory area. The extra wordlines are connected to a voltage in such a manner so as to simulate a floating wordline condition. Associated with each extra wordline is a driver circuit that connects the extra wordline to a voltage to allow it to charge up to the voltage, and subsequently disconnects the wordline from the voltage to allow it to float. While the extra wordline is floating, measurements may be made on the memory device to gather data useful for testing production memory chips for floating wordline conditions. According to another aspect, one or more extra wordlines may be activated to connect its attached memory cells to bitlines, thereby increasing the capacitance on the bitlines.

Abstract: A memory device and methods to exploit extra or dummy wordlines in the memory device, wherein the extra wordlines are not part of a main memory area of the memory device but, when activated, connect their attached memory cells to the bitlines of the main memory area. The extra wordlines are connected to a voltage in such a manner so as to simulate a floating wordline condition. Associated with each extra wordline is a driver circuit that connects the extra wordline to a voltage to allow it to charge up to the voltage, and subsequently disconnects the wordline from the voltage to allow it to float. While the extra wordline is floating, measurements may be made on the memory device to gather data useful for testing production memory chips for floating wordline conditions. According to another aspect, one or more extra wordlines may be activated to connect its attached memory cells to bitlines, thereby increasing the capacitance on the bitlines.

Abstract: A new apparatus and method for simultaneously testing a plurality of circuit devices are achieved. The apparatus comprises, first, a tester having at least one output signal. A plurality of circuit devices is used. Each circuit device has at least one input signal. Finally, a plurality of auto-reset fuses is used. Each auto-reset fuse is coupled between the tester output signal and one of the input signals of the plurality of circuit devices. The auto-reset fuses automatically switch from low impedance during low current to high impedance during high current. The auto-reset fuses automatically switch from high impedance to low impedance after a waiting time.