Abstract: A method and system for the processing of one or more wafers in a process tool is provided, the method comprising subjecting the one or more wafer in a reaction chamber to a process, generating an inhibit next load flag on predefined conditions, the inhibit next load flag not effecting already started processing of a wafer. Prior to the start of the processing of a wafer, a check is performed to see if an inhibit next load flag has been set. When upon checking it has been found that an inhibit next load has been set, the start of the process in the reaction chamber is prohibited. The method further includes providing pre-programmed recovery procedures, such that after execution of a pre-programmed recovery procedure the to be processed wafer of which the start of the processing is prohibited ends in a defined state such that the tool can be used for further processing.

Abstract: A system for processing semiconductor wafers includes adaptations allowing the selective handling of cassettes for both 200-mm wafers and 300-mm wafers. The system is configured initially for handling standard 300-mm FOUP cassettes. Adaptions for handling 200-mm wafer open cassettes include a load port adapter frame for receiving such cassettes on a input/output platform; a cassette handler adapter configured for reversibly mounting on a cassette handler end effector and for receiving 200-mm open cassettes; a store adapter frame for converting 300-mm FOUP storage compartments into compartments for storing 200-mm open cassettes; and a Transhipment FOUP for holding 200-mm open cassettes upon a cassette transfer platform and bringing such cassettes into an interface with a wafer handler. The Transhipment FOUP has outer surfaces resembling a standard 300-mm FOUP cassette, but is configured to receive a 200-mm open cassette therein.

Abstract: Method and device for the heat treatment of substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature Ttrig.

Abstract: A floating substrate reactor allows heat treatment of a series of semiconductor substrates, one by one. The heat treatment occurs while flowing gas suspends a substrate between two heated surfaces of the reactor. The two heated surfaces each have multiple heating zones. The heating zones are heated to desired temperature(s) and a substrate is then loaded into the reactor for heat treatment. Upon loading, the relatively cold substrate absorbs heat and cools the process chamber. A heat spike, which can be varied, is applied to the heating zones to heat the reactor to the desired temperature again. The substrate, however, is unloaded from the reactor before the temperatures of the heating zones have reached the desired temperature. After the heating zones have reached the desired temperature, the next substrate in the series of substrates is loaded into the reactor for heat treatment.

Abstract: A floating substrate reactor allows heat treatment of a series of semiconductor substrates, one by one. The heat treatment occurs while flowing gas suspends a substrate between two heated surfaces of the reactor. The two heated surfaces each have multiple heating zones. The heating zones are heated to desired temperature(s) and a substrate is then loaded into the reactor for heat treatment. Upon loading, the relatively cold substrate absorbs heat and cools the process chamber. A heat spike, which can be varied, is applied to the heating zones to heat the reactor to the desired temperature again. The substrate, however, is unloaded from the reactor before the temperatures of the heating zones have reached the desired temperature. After the heating zones have reached the desired temperature, the next substrate in the series of substrates is loaded into the reactor for heat treatment.

Abstract: A system and method is used for measuring the performance of semiconductor processing tools. A software component may be used to define a set of performance variables and associate performance limits. From the set of performance variables, a set of variables may be selected to create a customized test for a particular tool. The system may be used to store the results of the tests within the system for fast comparison with the associated performance limits, with previous test results, or both. The system may be used to display an overall status of groups of performance variables.

Abstract: An apparatus for treating wafers, provided with at least one treatment chamber, the apparatus being provided with a feeding section in which wafers contained in a wafer storage box can be fed into the apparatus, the apparatus being provided with a wafer handling apparatus, by means of which wafers can be taken out of the wafer storage boxes so as to be treated in the treatment chamber, and the apparatus being provided with at least one sensor box arranged such that the wafer handling apparatus can feed a wafer into the sensor box through an opening provided for that purpose in the at least one sensor box, and the at least one sensor box being arranged to carry out measurements at a wafer, wherein the at least one sensor box is movably arranged and the apparatus is provided with a sensor box handling apparatus arranged to move the at least one sensor box from a storage position to a measuring position.

Abstract: A method and system for the processing of one or more wafers in a process tool is provided, the method comprising subjecting the one or more wafer in a reaction chamber to a process, generating an inhibit next load flag on predefined conditions, the inhibit next load flag not effecting already started processing of a wafer. Prior to the start of the processing of a wafer, a check is performed to see if an inhibit next load flag has been set. When upon checking it has been found that an inhibit next load has been set, the start of the process in the reaction chamber is prohibited. The method further includes providing pre-programmed recovery procedures, such that after execution of a pre-programmed recovery procedure the to be processed wafer of which the start of the processing is prohibited ends in a defined state such that the tool can be used for further processing.

Abstract: A system and method is used for measuring the performance of semiconductor processing tools. A software component may be used to define a set of performance variables and associate performance limits. From the set of performance variables, a set of variables may be selected to create a customized test for a particular tool. The system may be used to store the results of the tests within the system for fast comparison with the associated performance limits, with previous test results, or both. The system may be used to display an overall status of groups of performance variables.

Abstract: Method and device for the heat treatment of substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature Ttrig.

Abstract: Method and device for the heat treatment of substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature Ttrig.

Abstract: A method and system for the processing of one or more wafers in a process tool is provided, the method comprising subjecting the one or more wafer in a reaction chamber to a process, generating an inhibit next load flag on predefined conditions, the inhibit next load flag not effecting already started processing of a wafer. Prior to the start of the processing of a wafer, a check is performed to see if an inhibit next load flag has been set. When upon checking it has been found that an inhibit next load has been set, the start of the process in the reaction chamber is prohibited. The method further includes providing pre-programmed recovery procedures, such that after execution of a pre-programmed recovery procedure the to be processed wafer of which the start of the processing is prohibited ends in a defined state such that the tool can be used for further processing.

Abstract: A system for processing semiconductor wafers includes adaptations allowing the selective handling of cassettes for both 200-mm wafers and 300-mm wafers. The system is configured initially for handling standard 300-mm FOUP cassettes. Adaptions for handling 200-mm wafer open cassettes include a load port adapter frame for receiving such cassettes on a input/output platform; a cassette handler adapter configured for reversibly mounting on a cassette handler end effector and for receiving 200-mm open cassettes; a store adapter frame for converting 300-mm FOUP storage compartments into compartments for storing 200-mm open cassettes; and a Transhipment FOUP for holding 200-mm open cassettes upon a cassette transfer platform and bringing such cassettes into an interface with a wafer handler. The Transhipment FOUP has outer surfaces resembling a standard 300-mm FOUP cassette, but is configured to receive a 200-mm open cassette therein.

Abstract: A system for processing semiconductor wafers includes adaptations allowing the selective handling of cassettes for both 200-mm wafers and 300-mm wafers. The system is configured initially for handling standard 300-mm FOUP cassettes. Adaptions for handling 200-mm wafer open cassettes include a load port adapter frame for receiving such cassettes on a input/output platform; a cassette handler adapter configured for reversibly mounting on a cassette handler end effector and for receiving 200-mm open cassettes; a store adapter frame for converting 300-mm FOUP storage compartments into compartments for storing 200-mm open cassettes; and a Transhipment FOUP for holding 200-mm open cassettes upon a cassette transfer platform and bringing such cassettes into an interface with a wafer handler. The Transhipment FOUP has outer surfaces resembling a standard 300-mm FOUP cassette, but is configured to receive a 200-mm open cassette therein.

Abstract: An apparatus for treating wafers, provided with at least one treatment chamber, the apparatus being provided with a feeding section in which wafers contained in a wafer storage box can be fed into the apparatus, the apparatus being provided with a wafer handling apparatus, by means of which wafers can be taken out of the wafer storage boxes so as to be treated in the treatment chamber, and the apparatus being provided with at least one sensor box arranged such that the wafer handling apparatus can feed a wafer into the sensor box through an opening provided for that purpose in the at least one sensor box, and the at least one sensor box being arranged to carry out measurements at a wafer, wherein the at least one sensor box is movably arranged and the apparatus is provided with a sensor box handling apparatus arranged to move the at least one sensor box from a storage position to a measuring position.

Abstract: Device for processing semiconductor wafers, comprising at least one processing chamber which is completely closed with the exception of a connection to a distribution. System. In said at least one processing chamber there are situated preferably two reactors and a common feed/removal system in order to be able to subject wafers, which may optionally be arranged in boats, to an identical processing operation.

Abstract: A method and system for the processing of one or more wafers in a process tool is provided, the method comprising subjecting the one or more wafer in a reaction chamber to a process, generating an inhibit next load flag on predefined conditions, the inhibit next load flag not effecting already started processing of a wafer. Prior to the start of the processing of a wafer, a check is performed to see if an inhibit next load flag has been set. When upon checking it has been found that an inhibit next load has been set, the start of the process in the reaction chamber is prohibited. The method further includes providing pre-programmed recovery procedures, such that after execution of a pre-programmed recovery procedure the to be processed wafer of which the start of the processing is prohibited ends in a defined state such that the tool can be used for further processing.

Abstract: Method and device for the heat treatment of substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature Ttrig.

Abstract: Enhanced inserts are formed having a cylindrical grip and a protrusion extending from the grip. An ultra hard material layer is bonded on top of the protrusion. The inserts are mounted on a rock bit and contact the earth formations off center. The ultra hard material layer is thickest at a critical zone which encompasses a major portion of the region of contact between the insert and the earth formation. Transition layers may also be formed between the ultra hard material layer and the protrusion so as to reduce stresses formed on the interface between the ultra hard material and the protrusion.

Abstract: A system for processing semiconductor wafers includes adaptations allowing the selective handling of cassettes for both 200-mm wafers and 300-mm wafers. The system is configured initially for handling standard 300-mm FOUP cassettes. Adaptions for handling 200-mm wafer open cassettes include a load port adapter frame for receiving such cassettes on a input/output platform; a cassette handler adapter configured for reversibly mounting on a cassette handler end effector and for receiving 200-mm open cassettes; a store adapter frame for converting 300-mm FOUP storage compartments into compartments for storing 200-mm open cassettes; and a Transhipment FOUP for holding 200-mm open cassettes upon a cassette transfer platform and bringing such cassettes into an interface with a wafer handler. The Transhipment FOUP has outer surfaces resembling a standard 300-mm FOUP cassette, but is configured to receive a 200-mm open cassette therein.