Abstract: Hollow bodies having a silicon-comprising shell, are produced by, in a gas comprising at least one silane of the general formula SinH2n+2?mXm with n=1 to 4, m=0 to 2n+2 and X=halogen, (a) generating a non-thermal plasma by an AC voltage of frequency f, or operating a light arc, or introducing electromagnetic energy in the infrared region into the gas, giving a resulting phase which (b) is dispersed in a wetting agent and distilled, and then (c) the distillate is contacted at least once with a mixture of at least two of the substances hydrofluoric acid, nitric acid, water, giving a solid residue comprising hollow bodies having a silicon-comprising shell after the conversion reaction of the distillate with the mixture has abated or ended.

Abstract: The invention relates to a process for producing trimeric and/or quaternary silicon compounds or trimeric and/or quaternary germanium compounds, where a mixture of silicon compounds or a mixture of germanium compounds is exposed to a nonthermal plasma, and the resulting phase is subjected at least once to a vacuum rectification and filtration.

Abstract: The invention provides a method for the processing of finely divided solids during the production of chlorosilanes, which is characterized in that the finely divided solids are hydraulically pressed to give bodies of increased density. Moreover, also provided is the compact obtained by the process according to the invention which is characterized by a filling factor of the finely divided solids to be hydraulically pressed of 3.9 to 4.5.

Abstract: The invention provides a method for the processing of finely divided solids during the production of chlorosilanes, which is characterized in that the finely divided solids are hydraulically pressed to give bodies of increased density. Moreover, also provided is the compact obtained by the process according to the invention which is characterized by a filling factor of the finely divided solids to be hydraulically pressed of 3.9 to 4.5.