Abstract: An illumination adjustment apparatus, to adjust a cross slot illumination of a beam in a lithographic apparatus, includes a plurality of fingers to adjust the cross slot illumination to conform to a selected intensity profile. Each finger has a distal edge that includes at least two segments. The two segments form an indentation of the distal edge.

Abstract: A method for source mask optimization or mask only optimization used to image a pattern onto a substrate. The method includes determining a non-uniform illumination intensity profile for illumination; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto a substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination optical system and projection optics of a lithographic apparatus. In some embodiments, the lithographic apparatus includes a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may include performing optical proximity correction, for example.

Abstract: An illumination adjustment apparatus, to adjust a cross slot illumination of a beam in a lithographic apparatus, includes a plurality of fingers to adjust the cross slot illumination to conform to a selected intensity profile. Each finger has a distal edge that includes at least two segments. The two segments form an indentation of the distal edge.

Abstract: Acoustic resonators with enhanced boundary conditions are disclosed. In an example aspect, a resonator includes a volume of piezoelectric material including an upper surface and a lower surface. The resonator also includes a bottom electrode extending along a portion of the lower surface of the volume of piezoelectric material. The resonator further includes a multi-layered top electrode extending along a portion of the upper surface of the volume of piezoelectric material. The multi-layered top electrode includes an active region including an interface layer of a first thickness, where the active region overlaps a portion of the bottom electrode. The multi-layered top electrode also includes a frame region including the interface layer of a second thickness, where the second thickness is greater than the first thickness. The multi-layered top electrode further includes an outer region including the interface layer of a third thickness, where the third thickness is less than the second thickness.

Abstract: Example implementations of a bulk acoustic wave resonator with an optimized outer perimeter are disclosed. In an example aspect, a resonator includes a truncated-ellipsoid-shaped active region. The active region includes an outer electrode disposed as a first layer of the active region. The active layer also includes a piezoelectric layer disposed as a second layer of the active region with the piezoelectric layer disposed interior to the outer electrode. The active layer further includes an inner electrode disposed as a third layer of the active region with the inner electrode disposed interior to the piezoelectric layer.

Abstract: Acoustic resonators with enhanced boundary conditions are disclosed. In an example aspect, a resonator includes a volume of piezoelectric material including an upper surface and a lower surface. The resonator also includes a bottom electrode extending along a portion of the lower surface of the volume of piezoelectric material. The resonator further includes a multi-layered top electrode extending along a portion of the upper surface of the volume of piezoelectric material. The multi-layered top electrode includes an active region including an interface layer of a first thickness, where the active region overlaps a portion of the bottom electrode. The multi-layered top electrode also includes a frame region including the interface layer of a second thickness, where the second thickness is greater than the first thickness. The multi-layered top electrode further includes an outer region including the interface layer of a third thickness, where the third thickness is less than the second thickness.

Abstract: Example implementations of a bulk acoustic wave resonator with an optimized outer perimeter are disclosed. In an example aspect, a resonator includes a truncated-ellipsoid-shaped active region. The active region includes an outer electrode disposed as a first layer of the active region. The active layer also includes a piezoelectric layer disposed as a second layer of the active region with the piezoelectric layer disposed interior to the outer electrode. The active layer further includes an inner electrode disposed as a third layer of the active region with the inner electrode disposed interior to the piezoelectric layer.

Abstract: A wavelength selective bolometer includes a substrate configured to serve as a foundation for the apparatus and a thermal isolation gap established between the substrate and subsequent solid material layers. A conducting ground plane layer is disposed above the thermal isolation gap, and a first dielectric layer is mated to a top surface of the conducting ground plane. A temperature sensing material layer is mated to a top surface of the first dielectric layer, and a plurality of interconnects is placed in electrical communication with the temperature sensing material layer. A second dielectric layer is mated to a top surface of the temperature sensing material, and at least one conductive element is mated to a top surface of the second dielectric layer. The dimensions of the conductive element and other variables are chosen to achieve resonant absorption of selected wavelengths of radiation incident thereupon.