Abstract: This invention is concerned with an electrically conductive polymer blend composition which is a liquid compatible blend, comprising a doped product formed form blending a first solution comprising a Lewis base electrically conductive polymer in undoped form in a first organic solvent with a second solution comprising a Lewis acid polymer dopant in a second organic solvent, wherein said Lewis acid polymer dopant dopes said Lewis base electrically conductive polymer in undoped form to obtain said electrically conductive polymer blend, the resulting doped conductive product being soluble in the combination of said first and said second organic solvents and mixable at the molecular level.

Abstract: Electrically conductive and abrasion resistant polymeric compositions, methods of fabrication thereof and uses thereof are described. Admixtures of abrasion resistant materials and electrically conductive polymeric materials are formed. Many of these admixtures arc light transmitting and can be used as an abrasion resistant light transmitting electrostatic discharge layers. The light transmitting discharge layer is useful as a surface coating for visual displays such as CRT screens to avoid electrostatic accumulation of dust and scratching.

Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.

Abstract: The present invention includes a multilevel air-gap-containing interconnect wiring structure including: a collection of interspersed line levels and via levels, the via levels and line levels containing conductive via and line features embedded in a dielectric having an air-gap and solid dielectric. The air-gap and solid dielectric includes (i) one or more solid dielectrics only in the shadows of the conductive features in overlying levels and (ii) a gaseous dielectric elsewhere in the structure. The collection of line levels and via levels are topped by a laminated thin, taut insulating cover layer having openings to selected conductive features in the topmost underlying line or via layer, and the openings are filled with conductive material connecting to terminal pad contacts on the insulating cover layer.

Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.

Abstract: Active devices that have either a thread or a ribbon geometry. The thread geometry includes single thread active devices and multiple thread devices. Single thread devices have a central core that may contain different materials depending upon whether the active device is responsive to electrical, light, mechanical, heat, or chemical energy. Single thread active devices include FETs, electro-optical devices, stress transducers, and the like. The active devices include a semiconductor body that for the single thread devices is a layer about the core of the thread. For the multiple thread devices, the semiconductor body is either a layer on one or more of the threads or an elongated body disposed between two of the threads. For example, a FET is formed of three threads, one of which carries a gate insulator layer and a semiconductor layer and the other two of which are electrically conductive and serve as the source and drain. The substrates or threads are preferably flexible and can be formed in a fabric.

Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.

Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.

Abstract: A three dimensional packaging architecture for ultimate high performance computers and methods for fabricating thereof are described. The packgage allows very dense packaging of multiple integrated circuit chips for minimum communication distances and maximum clock speeds of the computer. The packaging structure is formed from a plurality of subassemblies. Each subassembly is formed from a substrate which has on at least one side thereof at least one integrated circuit device. Between adjacent subassemblies there is disposed a second substrate. There are electrical interconnection means to electrically interconnect contact locations on the subassembly to contact locations on the second substrate. The electrical interconnection means can be solder mounds, wire bonds and the like. The first substrate provides electrical signal intercommunication between the electronic devices and each subassembly. The second substrate provides ground and power distribution to the plurality of subassemblies.

Abstract: A method to achieve a very low effective dielectric constant in high performance back end of the line chip interconnect wiring and the resulting multilayer structure are disclosed. The process involves fabricating the multilayer interconnect wiring structure by methods and materials currently known in the state of the art of semiconductor processing; removing the intralevel dielectric between the adjacent metal features by a suitable etching process; applying a thin passivation coating over the exposed etched structure; annealing the etched structure to remove plasma damage; laminating an insulating cover layer to the top surface of the passivated metal features; optionally depositing an insulating environmental barrier layer on top of the cover layer; etching vias in the environmental barrier layer, cover layer and the thin passivation layer for terminal pad contacts; and completing the device by fabricating terminal input/output pads.

Abstract: The present invention relates to electrically conductive polymer blend compositions comprising a non-conducting polymeric component and an electrically conducting polymeric component and specific applications to which the blend compositions can be put.

Abstract: A polymer blend composition, capable of being made electrically conductive by application of heat having an electrically conductive upon doping polymer in undoped form; the undoped polymer is selected from the group consisting of substituted and unsubstituted polyparaphenylenevinylenes, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polyselenophenes, polyacetylenes filtered from soluble precursors and combinations and blends thereof, compounded and blended at a molecular scale with a dielectric polymer; wherein the dielectric polymer is selected from the group consisting of interpolymers of acrylonitrile-butadiene-styrene, acetal acrylic liquid crystal polymers, polybutylene terephthalate, polycarbonate, polyester, polyetherimide, polyethersulfone, polyethylene, polyethylene terephthalate, polyphenylene oxide, polyphenylene sulfide, polypropylene, polystyrene, polyurethane, polyvinychloride, styrene-acrylonitrile copolymer, fluoropolymers, nylon polyesters, and thermoplastic

Abstract: The present invention is directed to vibrational methods of fabricating electrically conducting polymers and precursors thereof in which the polymer chains are deaggregated. Such deaggregated conducting polymers and precursors thereof exhibit better solution processability and higher electrical conductivity than do the corresponding aggregated polymers. The polymers in the non-doped precursor form or in the conducting form in solution or during the polymerization process are exposed to ultrasound and shear mixing. Due to this treatment, the chains become deaggregated. Furthermore, ultrasound and shear mixing is used during the doping of the precursor polymers. This treatment allows more uniform doping, enhanced solubility, and higher electrical conductivity. The solutions treated with ultrasound/shear mixing are subsequently processed into a structural part, a film, or a fiber.

Abstract: The instant invention is drawn vibrational methods of deaggregating electrically conductive polymers. Said methods include the steps of:I) providing an intrinsically conductive polymer comprising a specific morphology;II) determining by experimental or theoretical means a desired degree of aggregation for said intrinsically conductive polymer;III) agitating said intrinsically conductive polymer by a method selected from the group consisting of ultrasound, vibration, shear mixing and cavitation, said agitation being performed at a rate sufficient to achieve the determined degree of aggregation.

Abstract: A control system for a blind microwave radiation tool a workpiece is described. The controlled system automatically tunes the cavity containing the workpiece. The control system automatically controls the temperature of the workpiece according to a predetermined temperature versus time schedule. Control system automatically determines when the workpiece has reached a particular predetermined physical condition. To achieve these results the control system automatically monitors applied power, reflected power or current temperature and automatically controls the microwave cavity volume and shape and launch structure including antennae location, cavity short location, cavity diameter, coupling loop position, etc. in order to maintain the cavity in resonance and to determine when to exit without operator intervention.

Abstract: A solid state chain extension method provides for the formation of a solid state film comprised of a high molecular weight polymer by chain extending a deblocked Lewis base with Lewis acid oligomers while the reactants are in a solid state form. In one embodiment, a negative resist is prepared by selectively exposing regions of the solid state film. The Lewis base is deblocked at the exposed regions by a suitable deblocking means. The Lewis acid oligomers and the deblocked Lewis base chain extend at the exposed regions. Development of the film removes the non-polymerized reactants. Optionally, the Lewis acid oligomers, when radiation-cross-linking, are cross-linked with one another prior to deblocking the Lewis base to form a negative resist. The cross-linked oligomers polymerize with the subsequently deblocked base to provide a high molecular weight polymer film.

Abstract: A composition containing a polymeric matrix and a conductive filler component is provided. The conductive filler component comprises conductive particles and a polymer selected from the group consisting of substituted and unsubstituted polyanilines, substituted and unsubstituted polyparaphenylenevinylenes, substituted and unsubstituted polythiophenes, substituted and unsubstituted polyazines, substituted and unsubstituted polyparaphenylenes, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophene, substituted and unsubstituted poly-p-phenylene sulfides and substituted and unsubstituted polyacetylenes, and mixtures thereof, and copolymers thereof. Compositions of the present invention are useful as corrosion protecting layers for metal substrates, for electrostatic discharge protection, electromagnetic interference shielding, and as adhesives for interconnect technology as alternatives to solder interconnections.

Abstract: Photosensitive compositions containing a polyimide precursor and a complex cation of a polymerizable carboxylic acid functional compound with a tertiary amino functional group; and use thereof to provide a pattern.

Abstract: Photosensitive compositions containing a polyimide precursor and a complex cation of a polymerizable carboxylic acid functional compound with a tertiary amino functional group; and use thereof to provide a pattern.

Abstract: Electrostatic discharge protection or electromagnetic interference shielding is provided by applying a composition comprising a thermoset or thermoplastic polymeric matrix, and a conductive filler component, where said filler component comprises electrically conductive particles and at least one conducting polymer to a dielectric substrate.