Abstract: Embodiments of a 3D micro-battery structure are disclosed. The 3D micro-battery structure includes an electrode micro-structure and a thin film electrolyte. The electrode micro-structure includes a base and a group of electrodes extending from the base. The thin film electrolyte conformally coats each of the group of electrodes to form a group of coated electrodes, such that the thin film electrolyte is ionically conducting and is electrically insulating.

Abstract: The invention relates to methods for producing doped thin layers on substrates comprising the steps of depositing a dopant precursor on the substrate via an atomic layer deposition technique; and exposing the deposited dopant precursor to radicals. The methods can further comprise depositing a compound adjacent the dopant metal via an atomic layer deposition technique; and exposing the deposited compound to radicals, thereby providing a host. The invention relates to articles comprising approximately atomically thin layers of metals or metal oxides doped with at least one different metal or metal oxide. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.

Abstract: A process for removing metallic material, for instance copper, iron, nickle and their oxides, from a surface of a substrate such as a silicon, silicon oxide or gallium arsenide substrate. The process includes the steps of: a) placing the substrate in a reaction chamber; b) providing in the reaction chamber a gas mixture, the mixture comprising a first component which is fluorine or a fluorine-containing compound, which will spontaneously dissociate upon adsorption on the substrate surface and a second component which is a halosilane compound, the halosilane, and the fluorine if present, being activated by: i) irradiation with UV; ii) heating to a temperature of about 800.degree. C. or higher; or iii) plasma generation, to thereby convert said metallic material to a volatile metal-halogen-silicon compound, and c) removing the metal-halogen-silicon compound from the substrate by volatilization. The process may be used to remove both dispersed metal and bulk metal films or islands.