Abstract: Methods of coating a semiconductor device with phosphor particles are disclosed. In the methods, a bath is provided which contains suspended particles of a first phosphor material and suspended particles of a second phosphor material. The particles of the first phosphor material have a mean particle size in the range from about 1 micron to about 6 microns, and the particles of the second phosphor material have a mean particle size in the range from about 12 microns to about 25 microns, wherein the particle size distribution of the phosphor material in the bath is bimodal. The semiconductor device is disposed in the bath containing the suspended particles, and a first biasing voltage is applied between an anode in electrical contact with the bath and the p side to hold the anode at a positive voltage with respect to the p side. A second biasing voltage is applied between the p side and the n side.

Abstract: A light source having an LED that is covered by a layer containing a phosphor is disclosed. The LED emits light in a first wavelength band. The phosphor containing layer includes particles that contain a phosphor having the formula Dy3A5O12, where A is at least one of the elements aluminum, gallium, indium, magnesium or silicon. The layer is positioned to receive a portion of the light from the LED and convert the light to light in a second wavelength band. The phosphor may be doped with Ce. Eu, and Tb, or a combination thereof.