Patents by Inventor Janet E. Hails

Janet E. Hails has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacture of cadmium mercury telluride
    Patent number: 8021914
    Abstract: A method of manufacture of cadmium mercury telluride (CMT) is disclosed. The method involves growing one or more buffer layers on a substrate by molecular beam epitaxy (MBE). Subsequently at least one layer of cadmium mercury telluride, Hg1-xCdxTe where x is between 0 and 1 inclusive, is grown by metal organic vapour phase epitaxy (MOVPE). The use of MBE to grow buffer layers allows a range of substrates to be used for CMT growth. The MBE buffer layers provide the correct orientation for later MOVPE growth of CMT and also prevent chemical contamination of the CMT and attack of the substrate during MOVPE. The method also allows for device processing of the CMT layers to be performed with further MOVPE growth of crystalline CMT layers and/or passivation layers. The invention also relates to new devices formed by the method.
    Type: Grant
    Filed: April 5, 2005
    Date of Patent: September 20, 2011
    Assignee: Qinetiq Limited
    Inventors: Janet E Hails, Jean Giess, John W Cairns, Andrew Graham, Louise Buckle, David J Hall, Neil T Gordon
  • Manufacture of cadmium mercury telluride on patterned silicon
    Patent number: 7892879
    Abstract: This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.
    Type: Grant
    Filed: August 1, 2005
    Date of Patent: February 22, 2011
    Assignee: Qinetiq Limited
    Inventors: Louise Buckle, John W Cairns, Jean Giess, Neil T Gordon, Andrew Graham, Janet E Hails, David J Hall, Colin J Hollier, Graham J Pryce, Andrew J Wright
  • Methods of fabricating devices and semiconductor layers comprising cadmium mercury telluride, mercury telluride, and cadmium telluride
    Patent number: 7026228
    Abstract: The invention relates to a method of depositing Hg1-xCdxTe onto a substrate, in a MOVPE technique, where 0?x?1; comprising the step of reacting together a volatile organotellurium compound, and one or both of (i) a volatile organocadmium compound and (ii) mercury vapour; characterised in that the organotellurium compound is isopropylallyltelluride. The invention also relates to devices, such as infrared sensors and solar cells, that comprise Hg1-xCdxTe materials.
    Type: Grant
    Filed: August 22, 2000
    Date of Patent: April 11, 2006
    Assignee: QinetiQ Limited
    Inventors: Janet E. Hails, Saamara N. Turney, legal representative, David J. Cole-Hamilton, William Bell, Douglas F. Foster, John Stevenson, deceased