Abstract: A multilayer, high yield and high density integrated circuit (IC) chips interposer and the method of manufacture therefore. A thin polyimide film is circuitized with copper on both sides. One side may be reserved for power or ground with the opposite side being a signal plane. Adhesive is laminated over both sides covering the circuit patterns. Vias are drilled through at least one adhesive surface, and through the polyimide film. Metal (copper) is blanket sputtered to coat the via walls. Polymer Metal Conductive (PMC) paste is screened to at least partially fill the vias. The Blanket metal is sub-etched using the screened PMC as a mask. Layers are stacked to form the interposer with the PMC bonding the stacked layers together and electrically interconnecting between layers.

Abstract: A multilayer, high yield and high density integrated circuit (IC) chips interposer and the method of manufacture therefore. A thin polyimide film is circuitized with copper on both sides. One side may be reserved for power or ground with the opposite side being a signal plane. Adhesive is laminated over both sides covering the circuit patterns. Vias are drilled through at least one adhesive surface, and through the polyimide film. Metal (copper) is blanket sputtered to coat the via walls. Polymer Metal Conductive (PMC) paste is screened to at least partially fill the vias. The Blanket metal is sub-etched using the screened PMC as a mask. Layers are stacked to form the interposer with the PMC bonding the stacked layers together and electrically interconnecting between layers.

Abstract: A method of replacing IC chip package wiring having an interposer comprising removing an interposer having a plurality of adhesively laminated interposer layers from the package, delaminating and replacing at least one interposer layer with a corrected interposer layer, relaminating the interposer layers with adhesive thus producing a replacement interposer and remounting the replacement interposer to the IC chip package.