Abstract: Concepts for conveniently arranging devices for the transduction of signals to and from voltage and current domains to infrared radiation domains is described. Specifically, optoelectronic components and methods of making the same are described. In one aspect, the optoelectronic component includes a base substrate having a pair of angled (or substantially perpendicular) faces with electrical traces extending therebetween. A semiconductor chip assembly is mounted on the first face of the base substrate and a photonic device is mounted on the second face. Both the semiconductor chip assembly and the photonic device are electrically connected to traces on the base substrate. The semiconductor chip assembly is generally arranged to be electrically connected to external devices. The photonic devices are generally arranged to optically communicate with one or more optical fibers. The described structure may be used with a wide variety of photonic devices.

Abstract: The techniques of the present invention are directed towards setting a photonic device into a groove of a substrate, which is then attached to the chip sub-assembly in a way that the resulting optoelectronic package has a low profile and the interconnects between the photonic device and the semiconductor chip are short. The technique involves partially etching a groove in a substrate to allow for positioning of a photonic device within the groove. The photonic device is connected to the chip sub-assembly through interconnects that extend through the thickness of the substrate. The photonic devices are placed on their sides so that the active facets are perpendicular to the main axis of the chip sub-assembly. In this configuration, the optical fibers can be positioned parallel to the CSA top surface, ensuring a low module profile in the process.

Abstract: Concepts for conveniently arranging devices for the transduction of signals to and from voltage and current domains to infrared radiation domains is described. Specifically, optoelectronic components and methods of making the same are described. In one aspect, the optoelectronic component includes a base substrate having a pair of angled (or substantially perpendicular) faces with electrical traces extending therebetween. A semiconductor chip assembly is mounted on the first face of the base substrate and a photonic device is mounted on the second face. Both the semiconductor chip assembly and the photonic device are electrically connected to traces on the base substrate. The semiconductor chip assembly is generally arranged to be electrically connected to external devices. The photonic devices are generally arranged to optically communicate with one or more optical fibers. The described structure may be used with a wide variety of photonic devices.

Abstract: An embodiment includes a connector element that comprises a connector body and a fiber optic ferrule slidably positioned inside the connector body. The ferrule holds at least one optical fiber. The connector element carries an optical sub-assembly including a photonic device and a spacer and includes a connector sleeve for receiving the connector element. The sleeve includes a ridge that operates as a first stop for the connector body and includes an alignment projection that coarsely aligns the fiber optic ferrule. The ferrule includes a pair of openings configured to receive a pair of alignment pins to provide fine alignment of optical fibers with corresponding photonic devices. The connector element is engaged with the connector sleeve to position the ferrule with respect to the optical sub-assembly such that the optical fiber is correctly positioned relative to a corresponding photonic device.

Abstract: The techniques of the present invention are directed towards setting a photonic device into a groove of a substrate, which is then attached to the chip sub-assembly in a way that the resulting optoelectronic package has a low profile and the interconnects between the photonic device and the semiconductor chip are short. The technique involves partially etching a groove in a substrate to allow for positioning of a photonic device within the groove. The photonic device is connected to the chip sub-assembly through interconnects that extend through the thickness of the substrate. The photonic devices are placed on their sides so that the active facets are perpendicular to the main axis of the chip sub-assembly. In this configuration, the optical fibers can be positioned parallel to the CSA top surface, ensuring a low module profile in the process.

Abstract: Concepts for conveniently arranging devices for the transduction of signals to and from voltage and current domains to infrared radiation domains is described. Specifically, optoelectronic components and methods of making the same are described. In one aspect, the optoelectronic component includes a base substrate having a pair of angled (or substantially perpendicular) faces with electrical traces extending therebetween. A semiconductor chip assembly is mounted on the first face of the base substrate and a photonic device is mounted on the second face. Both the semiconductor chip assembly and the photonic device are electrically connected to traces on the base substrate. The semiconductor chip assembly is generally arranged to be electrically connected to external devices. The photonic devices are generally arranged to optically communicate with one or more optical fibers. The described structure may be used with a wide variety of photonic devices.

Abstract: An optical fiber for amplifying or sourcing a light signal in a single transverse mode. The fiber comprises a host glass doped with erbium (Er) and a sensitizer such as ytterbium (Yb) or iron (Fe). Preferably the host glass is doped silicic glass (e.g., phosphate or borate doped). Electrical energy is provided to diode lasers that pump the Nd laser rod, which in turn pumps the fiber. Such a configuration for pumping the fiber provides a high energy transfer from the diodes to the Nd laser rod, which in turn enables high pumping powers to be coupled into the single-mode co-doped fiber. Based on the amplification characteristics of the co-doped fiber and the efficient coupling of power from the laser diodes, the amplifier provides power and small signal gains comparable to the best observed, while requiring only conventional and readily available diode-based pump sources.

Abstract: A laser is characterized by a glass gain medium which contains trivalent samarium Sm.sup.3+ ions and which, when optically pumped on one or a number of absorption bands to achieve excitation at or above the metastable .sup.4 G.sub.5/2 level, radiates light at a wavelength substantially corresponding to transitions from the .sup.4 G.sub.5/2 level of samarium.