Abstract: An improved photocell offering efficient power generation from broadband incident radiation, the photocell includes a first diode formed in single crystal silicon and one or more further diodes each formed in a single crystal Group II-VI semiconductor. In a preferred embodiment, a tandem photocell is provided that incorporates a first diode formed in single crystal silicon, a second diode formed in a Group II-VI semiconductor, an optional buffer layer and a highly doped layer of silicon acting as an optional tunnel junction between the two diodes. The device can additionally include a layer of silicon deposited at the rear of the structure to maximise current collection of longer wavelength light, and top and bottom (front and back) electrical contacts. In use, light impinges on the top (front) surface of the photocell and is absorbed (in turn) by diodes.