Abstract: An end-user requested service item may relate to a service item type having a developer defined label (DDL) that extends the attributes of the service item type by specifying an additional attribute for which a value may be collected from the end-user for creation of an end-user order for the service item. The value is not needed to complete the end-user order but is collected to avoid needing to collect the value from the end-user for subsequent creation of a corresponding inter-provider order. The value is automatically mapped from the end-user order to an appropriate field of the inter-provider order.

Abstract: An end-user requested service item may relate to a service item type having a developer defined label (DDL) that extends the attributes of the service item type by specifying an additional attribute for which a value may be collected from the end-user for creation of an end-user order for the service item. The value is not needed to complete the end-user order but is collected to avoid needing to collect the value from the end-user for subsequent creation of a corresponding inter-provider order. The value is automatically mapped from the end-user order to an appropriate field of the inter-provider order.

Abstract: An integrated photodiode is formed by providing a silicon substrate with a deep recessed tub in excess of about 20 microns, forming an isolated p-n junction on the peripheral tub surfaces, and selectively epitaxially filling the tub with intrinsic silicon. A desired monolithic integrated circuit is fabricated outside the tub periphery using conventional VLSI techniques. A photodiode electrode structure within the tub periphery can be fabricated at the same time as other monolithic circuit components are formed.

Abstract: An integrated photodiode is formed by providing a silicon substrate with a deep recessed tub in excess of about 20 microns, forming an isolated p-n junction on the peripheral tub surfaces, and selectively epitaxially filling the tub with intrinsic silicon. A desired monolithic integrated circuit is fabricated outside the tub periphery using conventional VLSI techniques. A photodiode electrode structure within the tub periphery can be fabricated at the same time as other monolithic circuit components are formed.

Abstract: It has been discovered that co-doping of Er-doped Si with a light element such as C, N or F can result in substantially increased Er luminescence. A further increase in luminescence can result if, in addition, oxygen is present in the Si. Apparatus or systems according to the invention comprise a device (e.g., laser, optical ampifier, LED) that comprises a planar waveguide whose core region contains, in addition to at least 90 atomic % Si or SiGe alloy, Er, Pr and/or Nd, and further contains C, N and/or F, and preferably also contains oxygen. Currently preferred apparatus or systems according to the invention comprise means for electrically pumping the waveguide means.

Abstract: The application describes a technique for passivating point defects that are characteristic of laser annealed semiconductors. According to the technique, the laser annealed material is treated with atomic hydrogen to electrically deactivate the defects.