Patents by Inventor Janet M. Sickler

Janet M. Sickler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5129962
    Abstract: A no-clean, thermally dissipated soldering flux is shown which includes hydroabietal alcohol as a flux base, an organic activator and an organic diluent. The hydroabietal alcohol provides a tacky medium which holds a precisely aligned chip in place both during placement and reflow. The nature of the formula renders a reducing atmosphere unnecessary. The composition is thermally dissipated during soldering and leaves no undesirable residue which would require a post-cleaning step.
    Type: Grant
    Filed: October 22, 1991
    Date of Patent: July 14, 1992
    Assignee: International Business Machines Corporation
    Inventors: Barbara L. Gutierrez, Janet M. Sickler
  • Patent number: 5127571
    Abstract: Water soluble soldering preflux compositions are shown which include gum arabic, modified polysaccharides and other natural resins as a carrier, an oxidation inhibitor and water. The compositions are useful in the assembly of precisely aligned electrical components during multiple step, electronic card assembly techniques. Use of the preflux compositions according to the method of the invention permits a flexible, site-specific method for joining electronic components to a printed circuit board with a fewer number of steps.
    Type: Grant
    Filed: October 31, 1991
    Date of Patent: July 7, 1992
    Assignee: International Business Machines Corporation
    Inventors: Barbara L. Gutierrez, Janet M. Sickler
  • Patent number: 4630356
    Abstract: Disclosed is a method of forming in a monocrystalline silicon body an optimum recessed oxide isolation structure with reduced steepness of the bird's neck. Starting from a monocrystalline silicon body, there is formed thereon a layered structure of first silicon dioxide, polycrystalline silicon, second silicon dioxide and silicon nitride, in that order. The layers are patterned to form openings in the structure at the areas where it is desired to form the oxide isolation pattern within the silicon body. The exposed areas of the silicon body are anisotropically reactive ion etched to an initial portion of the desired depth obtaining the corresponding portion of the trench having substantially vertical walls. Then by chemical etching the trench is extended to a final portion of the desired depth obtaining inwardly sloped walls in the final portion. The body is then thermally oxidized until the desired oxide isolation penetrates to the desired depth within the silicon body.
    Type: Grant
    Filed: September 19, 1985
    Date of Patent: December 23, 1986
    Assignee: International Business Machines Corporation
    Inventors: Rosemary Christie, Bao-Tai Hwang, San-Mei Ku, Janet M. Sickler