Patents by Inventor Janet Yu

Janet Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6821515
    Abstract: A stable lyophilized protein formulation is described which can be reconstituted with a suitable diluent to generate a high protein concentration reconstituted formulation which is suitable for subcutaneous administration. For example, anti-IgE and anti-HER2 antibody formulations have been prepared by lyophilizing these antibodies in the presence of a lyoprotectant. The lyophilized mixture thus formed is reconstituted to a high protein concentration without apparent loss of stability of the protein.
    Type: Grant
    Filed: August 25, 2000
    Date of Patent: November 23, 2004
    Assignee: Genentech, Inc.
    Inventors: Jeffrey L. Cleland, Chung C. Hsu, Xanthe M. Lam, David E. Overcashier, Janet Yu-Feng Yang
  • Patent number: 6685940
    Abstract: A stable lyophilized protein formulation is described which can be reconstituted with a suitable diluent to generate a high protein concentration reconstituted formulation which is suitable for subcutaneous administration. For example, anti-IgE and anti-HER2 antibody formulations have been prepared by lyophilizing these antibodies in the presence of a lyoprotectant. The lyophilized mixture thus formed is reconstituted to a high protein concentration without apparent loss of stability of the protein.
    Type: Grant
    Filed: March 14, 2001
    Date of Patent: February 3, 2004
    Assignee: Genentech, Inc.
    Inventors: James Andya, Jeffrey L. Cleland, Chung C. Hsu, Xanthe M. Lam, David E. Overcashier, Steven J. Shire, Janet Yu-Feng Yang, Sylvia Sau-Yan Wu
  • Publication number: 20030202972
    Abstract: A stable lyophilized protein formulation is described which can be reconstituted with a suitable diluent to generate a high protein concentration reconstituted formulation which is suitable for subcutaneous administration. For example, anti-IgE and anti-HER2 antibody formulations have been prepared by lyophilizing these antibodies in the presence of a lyoprotectant. The lyophilized mixture thus formed is reconstituted to a high protein concentration without apparent loss of stability of the protein.
    Type: Application
    Filed: May 2, 2003
    Publication date: October 30, 2003
    Applicant: Genentech, Inc.
    Inventors: James Andya, Jeffrey L. Cleland, Chung C. Hsu, Xanthe M. Lam, David E. Overcashier, Steven J. Shire, Janet Yu-Feng Yang, Sylvia Sau-Yan Wu
  • Patent number: 6548415
    Abstract: The present disclosure provides a method for etchback of a conductive layer in a contact via (contact hole). The method described is typically used in the formation of a conductive plug within the contact hole. The method includes a first etchback in which the conductive layer is etched back; a buffer (i.e., transition) step during which the etch rate of the conductive layer is reduced; and a second etchback in which the amount of chemically reactive etchant is reduced from that used in the first etchback and a plasma species is added to provide additional physical bombardment, in an isotropic etch of the substrate surface surrounding the contact hole.
    Type: Grant
    Filed: September 5, 2001
    Date of Patent: April 15, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Chris Ting, Janet Yu
  • Patent number: 6399508
    Abstract: The present disclosure provides a method for etching metal-comprising layers within a semiconductor structure using an inorganic dielectric hard masking layer. A typical stacked metal layer structure for practicing the method of the invention includes, from top to bottom, an inorganic dielectric hard masking layer, an anti-reflection (ARC) layer, a conductive layer, a diffusion barrier layer, and a dielectric layer, all deposited on a surface of a silicon substrate. When the inorganic dielectric hard masking layer is pattern etched, using an overlying photoresist mask, residual photoresist is removed prior to subsequent steps in which underlying metal-comprising layers are etched. The metal-comprising layers are then etched using a chlorine-based plasma, using the inorganic dielectric layer as a hard mask. The method of the invention provides good etch profile control without undesirable polymeric contamination.
    Type: Grant
    Filed: January 6, 2000
    Date of Patent: June 4, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Chris Ting, Janet Yu
  • Publication number: 20020009891
    Abstract: The present disclosure provides a method for etchback of a conductive layer in a contact via (contact hole). The method described is typically used in the formation of a conductive plug within the contact hole. The method includes a first etchback in which the conductive layer is etched back; a buffer (i.e., transition) step during which the etch rate of the conductive layer is reduced; and a second etchback in which the amount of chemically reactive etchant is reduced from that used in the first etchback and a plasma species is added to provide additional physical bombardment, in an isotropic etch of the substrate surface surrounding the contact hole.
    Type: Application
    Filed: September 5, 2001
    Publication date: January 24, 2002
    Inventors: Chris Ting, Janet Yu
  • Patent number: 6309977
    Abstract: The present disclosure provides a method for etchback of a conductive layer in a contact via (contact hole). The method described is typically used in the formation of a conductive plug within the contact hole. The method includes a first etchback in which the conductive layer is etched back; a buffer (i.e., transition) step during which the etch rate of the conductive layer is reduced; and a second etchback in which the amount of chemically reactive etchant is reduced from that used in the first etchback and a plasma species is added to provide additional physical bombardment, in an isotropic etch of the substrate surface surrounding the contact hole.
    Type: Grant
    Filed: February 7, 2000
    Date of Patent: October 30, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Chris Ting, Janet Yu
  • Publication number: 20010014326
    Abstract: A stable lyophilized protein formulation is described which can be reconstituted with a suitable diluent to generate a high protein concentration reconstituted formulation which is suitable for subcutaneous administration. For example, anti-IgE and anti-HER2 antibody formulations have been prepared by lyophilizing these antibodies in the presence of a lyoprotectant. The lyophilized mixture thus formed is reconstituted to a high protein concentration without apparent loss of stability of the protein.
    Type: Application
    Filed: March 14, 2001
    Publication date: August 16, 2001
    Applicant: Genentech, Inc.
    Inventors: James Andya, Jeffrey L. Cleland, Chung C. Hsu, Xanthe M. Lam, David E. Overcashier, Steven J. Shire, Janet Yu-Feng Yang, Sylvia Sau-Yan Wu
  • Patent number: 6267958
    Abstract: A stable lyophilized protein formulation is described which can be reconstituted with a suitable diluent to generate a high protein concentration reconstituted formulation which is suitable for subcutaneous administration. For example, anti-IgE and anti-HER2 antibody formulations have been prepared by lyophilizing these antibodies in the presence of a lyoprotectant. The lyophilized mixture thus formed is reconstituted to a high protein concentration without apparent loss of stability of the protein.
    Type: Grant
    Filed: March 14, 1996
    Date of Patent: July 31, 2001
    Assignee: Genentech, Inc.
    Inventors: James Andya, Jeffrey L. Cleland, Chung C. Hsu, Xanthe M. Lam, David E. Overcashier, Steven J. Shire, Janet Yu-Feng Yang, Sylvia Sau-Yan Wu
  • Patent number: 5770523
    Abstract: A method is provided for the removal of the surface layer of the residual photoresist mask pattern used for metal subtractive etching which uses the same reactor equipment but employs reactive fluorine-containing gases to form volatile compounds with the surface layer, so that subsequently a conventional oxygen plasma stripping process can be used for complete resist residue removal without requiring excessive temperature exposure of the integrated circuit devices.
    Type: Grant
    Filed: September 9, 1996
    Date of Patent: June 23, 1998
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Yeon Hung, Janet Yu, Weng-Liang Fang, Chang-Ching Kin