Abstract: A stable lyophilized protein formulation is described which can be reconstituted with a suitable diluent to generate a high protein concentration reconstituted formulation which is suitable for subcutaneous administration. For example, anti-IgE and anti-HER2 antibody formulations have been prepared by lyophilizing these antibodies in the presence of a lyoprotectant. The lyophilized mixture thus formed is reconstituted to a high protein concentration without apparent loss of stability of the protein.

Abstract: A stable lyophilized protein formulation is described which can be reconstituted with a suitable diluent to generate a high protein concentration reconstituted formulation which is suitable for subcutaneous administration. For example, anti-IgE and anti-HER2 antibody formulations have been prepared by lyophilizing these antibodies in the presence of a lyoprotectant. The lyophilized mixture thus formed is reconstituted to a high protein concentration without apparent loss of stability of the protein.

Abstract: A stable lyophilized protein formulation is described which can be reconstituted with a suitable diluent to generate a high protein concentration reconstituted formulation which is suitable for subcutaneous administration. For example, anti-IgE and anti-HER2 antibody formulations have been prepared by lyophilizing these antibodies in the presence of a lyoprotectant. The lyophilized mixture thus formed is reconstituted to a high protein concentration without apparent loss of stability of the protein.

Abstract: The present disclosure provides a method for etchback of a conductive layer in a contact via (contact hole). The method described is typically used in the formation of a conductive plug within the contact hole. The method includes a first etchback in which the conductive layer is etched back; a buffer (i.e., transition) step during which the etch rate of the conductive layer is reduced; and a second etchback in which the amount of chemically reactive etchant is reduced from that used in the first etchback and a plasma species is added to provide additional physical bombardment, in an isotropic etch of the substrate surface surrounding the contact hole.

Abstract: The present disclosure provides a method for etching metal-comprising layers within a semiconductor structure using an inorganic dielectric hard masking layer. A typical stacked metal layer structure for practicing the method of the invention includes, from top to bottom, an inorganic dielectric hard masking layer, an anti-reflection (ARC) layer, a conductive layer, a diffusion barrier layer, and a dielectric layer, all deposited on a surface of a silicon substrate. When the inorganic dielectric hard masking layer is pattern etched, using an overlying photoresist mask, residual photoresist is removed prior to subsequent steps in which underlying metal-comprising layers are etched. The metal-comprising layers are then etched using a chlorine-based plasma, using the inorganic dielectric layer as a hard mask. The method of the invention provides good etch profile control without undesirable polymeric contamination.

Abstract: The present disclosure provides a method for etchback of a conductive layer in a contact via (contact hole). The method described is typically used in the formation of a conductive plug within the contact hole. The method includes a first etchback in which the conductive layer is etched back; a buffer (i.e., transition) step during which the etch rate of the conductive layer is reduced; and a second etchback in which the amount of chemically reactive etchant is reduced from that used in the first etchback and a plasma species is added to provide additional physical bombardment, in an isotropic etch of the substrate surface surrounding the contact hole.

Abstract: The present disclosure provides a method for etchback of a conductive layer in a contact via (contact hole). The method described is typically used in the formation of a conductive plug within the contact hole. The method includes a first etchback in which the conductive layer is etched back; a buffer (i.e., transition) step during which the etch rate of the conductive layer is reduced; and a second etchback in which the amount of chemically reactive etchant is reduced from that used in the first etchback and a plasma species is added to provide additional physical bombardment, in an isotropic etch of the substrate surface surrounding the contact hole.

Abstract: A stable lyophilized protein formulation is described which can be reconstituted with a suitable diluent to generate a high protein concentration reconstituted formulation which is suitable for subcutaneous administration. For example, anti-IgE and anti-HER2 antibody formulations have been prepared by lyophilizing these antibodies in the presence of a lyoprotectant. The lyophilized mixture thus formed is reconstituted to a high protein concentration without apparent loss of stability of the protein.

Abstract: A stable lyophilized protein formulation is described which can be reconstituted with a suitable diluent to generate a high protein concentration reconstituted formulation which is suitable for subcutaneous administration. For example, anti-IgE and anti-HER2 antibody formulations have been prepared by lyophilizing these antibodies in the presence of a lyoprotectant. The lyophilized mixture thus formed is reconstituted to a high protein concentration without apparent loss of stability of the protein.

Abstract: A method is provided for the removal of the surface layer of the residual photoresist mask pattern used for metal subtractive etching which uses the same reactor equipment but employs reactive fluorine-containing gases to form volatile compounds with the surface layer, so that subsequently a conventional oxygen plasma stripping process can be used for complete resist residue removal without requiring excessive temperature exposure of the integrated circuit devices.