Patents by Inventor Jang Fung Chen

Jang Fung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hybrid phase-shift mask
    Publication number: 20020015899
    Abstract: A method of forming a hybrid mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of forming at least one non-critical feature on the mask utilizing one of a low-transmission phase-shift mask (pattern) and a non-phase shifting mask (pattern), and forming at least one critical feature on the mask utilizing a high-transmission phase-shift mask (pattern).
    Type: Application
    Filed: April 24, 2001
    Publication date: February 7, 2002
    Inventors: Jang Fung Chen, Roger Caldwell, Thomas Laidig, Kurt E. Wampler
  • Optical proximity correction
    Publication number: 20020001758
    Abstract: Method for utilizing halftoning structures to manipulate the relative magnitudes of diffraction orders to ultimately construct the desired projected-image. At the resolution limit of the mask maker, this is especially useful for converting strongly shifted, no-0th-diffraction-order, equal-line-and-space chromeless phase edges to weak phase-shifters that have some 0th order. Halftoning creates an imbalance in the electric field between the shifted regions, and therefore results in the introduction of the 0th diffraction order.
    Type: Application
    Filed: April 24, 2001
    Publication date: January 3, 2002
    Inventors: John S. Petersen, Jang Fung Chen
  • Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
    Patent number: 5821014
    Abstract: A method for providing scattering bars for optical proximity effect correction on a mask used in a lithographic process. Scattering bar spacing and characteristics are adjusted and varied along with primary feature edge location in order to control CD's of features that are spaced a distance greater than the minimum pitch of a lithographic process but less than a nominal distance for two feature edges having independent scattering bars.
    Type: Grant
    Filed: February 28, 1997
    Date of Patent: October 13, 1998
    Assignee: Microunity Systems Engineering, Inc.
    Inventors: Jang Fung Chen, Kurt Wampler, Thomas L. Laidig