Abstract: There are provided a semiconductor device and a manufacturing method of the semiconductor device. The semiconductor device includes: a gate structure including conductive layers and insulating layers, which are alternately stacked; a plurality of channel structures penetrating the gate structure, the plurality of channel structures being arranged in a first direction; a plurality of cutting structures each isolating each of the plurality of channel structures, respectively, into a plurality of divided channel structures while penetrating each of the plurality of channel structures, respectively; and a plurality of interconnection lines located over the gate structure and extending in the first direction. Each of the plurality of cutting structures has substantially a cross (+) shape including extension parts extending in directions oblique to the first direction.

Abstract: A semiconductor memory device includes an electrode structure including a plurality of gate conductive films stacked on a substrate and a channel array in which a plurality of channel columns passing through the electrode structure are arranged in a second direction. The plurality of channel columns may include a first column whose uppermost plane has a first shape and a second column whose uppermost plane has a second shape. N (N is a natural number equal to more than 1) first columns and N second columns are alternately arranged in a first direction different from the second direction.

Abstract: A semiconductor memory device includes an electrode structure including a plurality of gate conductive films stacked on a substrate and a channel array in which a plurality of channel columns passing through the electrode structure are arranged in a second direction. The plurality of channel columns each include a first column whose uppermost plane has a first shape and a second column whose uppermost plane has a second shape. N (N is a natural number equal to more than 1) first columns and N second columns are alternately arranged in a first direction different from the second direction.

Abstract: The present disclosure provides a semiconductor device with a structural stability. The semiconductor device includes a stack of vertical alterations of conductive layers and insulating layers; supports passing through the stack, each of the supports having a cross-section of an equilateral polygon, the supports being equidistantly arranged in a first direction and a second direction, the first and second directions crossing each other; and contact plugs electrically coupled respectively to the conductive layers, each of the contact plugs being disposed between at least two adjacent supports of the supports.