Patents by Inventor Jang-Ho Chen
Jang-Ho Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8829487Abstract: A light emitting diode (LED) is provided. The LED includes a carrying substrate, a semiconductor composite layer and an electrode. The semiconductor composite layer is disposed on the carrying substrate, and an upper surface of the semiconductor composite layer includes a patterned surface and a flat surface. The electrode is disposed on the flat surface. A method for manufacturing the light emitting diode is provided as well.Type: GrantFiled: March 20, 2012Date of Patent: September 9, 2014Assignee: Walsin Lihwa CorporationInventors: Wei-Chi Lee, Shiue-Lung Chen, Jang-Ho Chen
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Patent number: 8597961Abstract: A method for improving internal quantum efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based substrate having a single crystalline structure; forming on the group-III nitride-based substrate an oxide layer, having a plurality of particles, without absorption of visible light, size, shape, and density of the particles are controlled by reaction concentration ratio of nitrogen/hydrogen, reaction time and reaction temperature; and growing a group-III nitride-based layer over the oxide layer; wherein the oxide layer prevents threading dislocation of the group-III nitride-based substrate from propagating into the group-III nitride-based layer, thereby improving internal quantum efficiency of the group-III nitride-based light emitting device.Type: GrantFiled: October 20, 2009Date of Patent: December 3, 2013Assignee: Walsin Lihwa CorporationInventors: Chang-Chi Pan, Ching-hwa Chang Jean, Jang-ho Chen
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Patent number: 8513688Abstract: A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N2/H2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.Type: GrantFiled: December 2, 2009Date of Patent: August 20, 2013Assignee: Walsin Lihwa CorporationInventors: Chang-Chi Pan, Ching-hwa Chang Jean, Jang-ho Chen
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Patent number: 8421104Abstract: A light emitting diode apparatus with enhanced luminous efficiency is disclosed in the present invention. The light emitting diode apparatus includes a light emitting diode chip for providing a first light beam; a substrate, having a cross-section of a trapezoid, for supporting the light emitting diode chip, which is transparent to the first light beam; and an encapsulating body, containing a phosphor and encapsulating the light emitting diode chip and the substrate, for fixing the light emitting diode chip and the substrate and providing a second light beam when the phosphor is excited by the first light beam. Due to the shape of the substrate, contact area of the substrate with the phosphor is enlarged. Luminous efficiency is enhanced as well.Type: GrantFiled: May 24, 2010Date of Patent: April 16, 2013Assignee: Walsin Lihwa CorporationInventors: Ming-teng Kuo, Jang-ho Chen, Ching-hwa Chang Jean
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Publication number: 20120241719Abstract: A light emitting diode (LED) is provided. The LED includes a carrying substrate, a semiconductor composite layer and an electrode. The semiconductor composite layer is disposed on the carrying substrate, and an upper surface of the semiconductor composite layer includes a patterned surface and a flat surface. The electrode is disposed on the flat surface. A method for manufacturing the light emitting diode is provided as well.Type: ApplicationFiled: March 20, 2012Publication date: September 27, 2012Applicant: WALSIN LIHWA CORPORATIONInventors: Wei-Chi Lee, Shiue-Lung Chen, Jang-Ho Chen
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Publication number: 20120241754Abstract: This invention directs to a light-emitting diode. The light-emitting diode includes a substrate, a semiconductor layer and an active layer. The semiconductor layer is disposed on the substrate and has a plurality of undulating structures. The active layer is conformably disposed on the semiconductor layer to have another plurality of undulating structures.Type: ApplicationFiled: January 4, 2012Publication date: September 27, 2012Inventors: Ming-Teng Kuo, Jang-Ho Chen
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Patent number: 8217488Abstract: A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes.Type: GrantFiled: July 19, 2010Date of Patent: July 10, 2012Assignee: Walsin Lihwa CorporationInventors: Shiue-Lung Chen, Jeng-Guo Feng, Jang-Ho Chen, Ching-Hwa Chang Jean
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Patent number: 8153455Abstract: A method for enhancing light extraction efficiency of a light emitting diode is disclosed. The method includes the steps of providing a light emitting diode including in sequence a substrate, a first layer of a first conduction type, an active layer, and a second layer of a second conduction type opposite to the first conduction type; growing a number of protrusions on at least one layer selected from the first layer, the active layer, and the second layer of the light emitting diode to form a patterned oxide layer for protecting the light emitting diode from etch; controlling height of the protrusions to achieve a predetermined etching depth of the light emitting diode; dry etching through a portion of the light emitting diode which is not protected by the patterned oxide layer to form a plurality of depressions on the light emitting diode; and removing the oxide layer from the selected layer. The light emitting diode is patterned so that more light beams can be emitted.Type: GrantFiled: February 1, 2010Date of Patent: April 10, 2012Assignee: Walsin Lihwa CorporationInventors: Ming-Teng Kuo, Jang-Ho Chen, Ching-Hwa Chang Jean
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Patent number: 8129728Abstract: A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and growing on the site layer an oxide layer, having a plurality of rods, each of which is formed in one of the pores. The shapes of the rods can be well controlled by adjusting reactive temperature, time and N2/H2 concentration ratio of atmosphere such that the shape and light escape angle of the rods can be changed.Type: GrantFiled: October 22, 2009Date of Patent: March 6, 2012Assignee: Walsin Lihwa CorporationInventors: Chang-Chi Pan, Ching-hwa Chang Jean, Jang-ho Chen
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Publication number: 20120049179Abstract: A method for enhancing light extraction efficiency of a group-III nitride-based light emitting device is disclosed. By roughening a n-type group-III nitride-based cladding layer or an undoped group-III nitride-based layer, a reflecting layer is formed. Because of gaps on the roughened surface, total internal reflection occurs, and light beams can be reflected back to a top surface of the light emitting device. Thus, the light extraction efficiency can be increased, and more light beams can be collected in a desired direction.Type: ApplicationFiled: August 25, 2010Publication date: March 1, 2012Applicant: WALSIN LIHWA CORPORATIONInventors: Ming-teng KUO, Jang-ho Chen, Ching-hwa Chang Jean
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Publication number: 20120012856Abstract: A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes.Type: ApplicationFiled: July 19, 2010Publication date: January 19, 2012Applicant: WALSIN LIHWA CORPORATIONInventors: Shiue-Lung CHEN, Jeng-Guo Feng, Jang-Ho Chen, Ching-Hwa Chang Jean
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Patent number: 8071401Abstract: The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer.Type: GrantFiled: December 10, 2009Date of Patent: December 6, 2011Assignee: Walsin Lihwa CorporationInventors: Shiue-Lung Chen, Jeng-Kuo Feng, Ching-Hwa Chang Jean, Jang-Ho Chen
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Publication number: 20110284892Abstract: A light emitting diode apparatus with enhanced luminous efficiency is disclosed in the present invention. The light emitting diode apparatus includes a light emitting diode chip for providing a first light beam; a substrate, having a cross-section of a trapezoid, for supporting the light emitting diode chip, which is transparent to the first light beam; and an encapsulating body, containing a phosphor and encapsulating the light emitting diode chip and the substrate, for fixing the light emitting diode chip and the substrate and providing a second light beam when the phosphor is excited by the first light beam. Due to the shape of the substrate, contact area of the substrate with the phosphor is enlarged. Luminous efficiency is enhanced as well.Type: ApplicationFiled: May 24, 2010Publication date: November 24, 2011Applicant: WALSIN LIHWA CORPORATIONInventors: Ming-teng KUO, Jang-ho CHEN, Ching-hwa CHANG JEAN
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Publication number: 20110189802Abstract: A method for enhancing light extraction efficiency of a light emitting diode is disclosed. The method includes the steps of providing a light emitting diode including in sequence a substrate, a first layer of a first conduction type, an active layer, and a second layer of a second conduction type opposite to the first conduction type; growing a number of protrusions on at least one layer selected from the first layer, the active layer, and the second layer of the light emitting diode to form a patterned oxide layer for protecting the light emitting diode from etch; controlling height of the protrusions to achieve a predetermined etching depth of the light emitting diode; dry etching through a portion of the light emitting diode which is not protected by the patterned oxide layer to form a plurality of depressions on the light emitting diode; and removing the oxide layer from the selected layer. The light emitting diode is patterned so that more light beams can be emitted.Type: ApplicationFiled: February 1, 2010Publication date: August 4, 2011Inventors: Ming-Teng KUO, Jang-Ho Chen, Ching-Hwa Chang Jean
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Publication number: 20110143466Abstract: The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer.Type: ApplicationFiled: December 10, 2009Publication date: June 16, 2011Applicant: WALSIN LIHWA CORPORATIONInventors: Shiue-Lung CHEN, Jeng-Kuo Feng, Ching-Hwa Chang Jean, Jang-Ho Chen
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Publication number: 20110127551Abstract: A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N2/H2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.Type: ApplicationFiled: December 2, 2009Publication date: June 2, 2011Applicant: WALSIN LIHWA CORPORATIONInventors: Chang-Chi Pan, Ching-Hwa Chang Jean, Jang-Ho Chen
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Publication number: 20110095314Abstract: A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and growing on the site layer an oxide layer, having a plurality of rods, each of which is formed in one of the pores. The shapes of the rods can be well controlled by adjusting reactive temperature, time and N2/H2 concentration ratio of atmosphere such that the shape and light escape angle of the rods can be changed.Type: ApplicationFiled: October 22, 2009Publication date: April 28, 2011Applicant: WALSIN LIHWA CORPORATIONInventors: Chang-Chi Pan, Ching-Hwa Chang Jean, Jang-Ho Chen
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Publication number: 20110089398Abstract: A method for improving internal quantum efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based substrate having a single crystalline structure; forming on the group-III nitride-based substrate an oxide layer, having a plurality of particles, without absorption of visible light, size, shape, and density of the particles are controlled by reaction concentration ratio of nitrogen/hydrogen, reaction time and reaction temperature; and growing a group-III nitride-based layer over the oxide layer; wherein the oxide layer prevents threading dislocation of the group-III nitride-based substrate from propagating into the group-III nitride-based layer, thereby improving internal quantum efficiency of the group-III nitride-based light emitting device.Type: ApplicationFiled: October 20, 2009Publication date: April 21, 2011Applicant: WALSIN LIHWA CORPORATIONInventors: Chang-Chi Pan, Ching-Hwa Chang Jean, Jang-Ho Chen
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Patent number: 7781242Abstract: A method of forming a vertical structure light emitting diode with a heat exhaustion structure, comprising the steps of: providing a sapphire substrate; producing a number of recesses on the sapphire substrate, each of which has a depth of p; forming a buffer layer having a number of protrusions, each of which has a height of q smaller than p so that when the protrusions of the buffer layer are accommodated within the recesses of the sapphire substrate, a number of gaps are formed therebetween for heat exhaustion; growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; removing the sapphire substrate by excimer laser lift-off (LLO); roughening the medium layer; and depositing electrodes on the roughened medium layer.Type: GrantFiled: December 10, 2009Date of Patent: August 24, 2010Assignee: Walsin Lihwa CorporationInventors: Shiue-Lung Chen, Jeng-Kuo Feng, Ching-Hwa Chang Jean, Jang-Ho Chen