Patents by Inventor Jang-Hoon HA

Jang-Hoon HA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10987635
    Abstract: Disclosed are a ceramic membrane for water treatment using oxidation-treated SiC and a method for manufacturing the same. An object of the present invention is to manufacture a ceramic membrane for water treatment, which can be sintered at a low temperature of 1,050° C. or less, in which a SiO2 oxide layer formed during an oxidation process induces volume expansion so as to prevent defects due to the contraction of a coating layer during general sintering. The ceramic membrane for water treatment using the oxidation treated SiC includes a porous ceramic support layer; and a SiC layer formed on the porous ceramic support layer and including SiC particles on which a SiO2 oxide layer formed on a surface thereof.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: April 27, 2021
    Assignee: KOREA INSTITUTE OF MATERIALS SCIENCE
    Inventors: In-Hyuck Song, Jong-Man Lee, Jang-Hoon Ha, Syed Zaighum Abbas Bukhari
  • Publication number: 20180169588
    Abstract: Disclosed are a ceramic membrane for water treatment using oxidation-treated SiC and a method for manufacturing the same. An object of the present invention is to manufacture a ceramic membrane for water treatment, which can be sintered at a low temperature of 1,050° C. or less, in which a SiO2 oxide layer formed during an oxidation process induces volume expansion so as to prevent defects due to the contraction of a coating layer during general sintering. The ceramic membrane for water treatment using the oxidation treated SiC includes a porous ceramic support layer; and a SiC layer formed on the porous ceramic support layer and including SiC particles on which a SiO2 oxide layer formed on a surface thereof.
    Type: Application
    Filed: November 22, 2017
    Publication date: June 21, 2018
    Inventors: In-Hyuck SONG, Jong-Man LEE, Jang-Hoon HA, Syed Zaighum Abbas Bukhari
  • Patent number: 9647136
    Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: May 9, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hyun-Jung Lee, Sung-Haeng Cho, Woo-Geun Lee, Jang-Hoon Ha, Hee-Jun Byeon, Ji-Yun Hong, Ji-Soo Oh
  • Publication number: 20150287836
    Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.
    Type: Application
    Filed: June 18, 2015
    Publication date: October 8, 2015
    Inventors: Hyun-Jung Lee, Sung-Haeng Cho, Woo-Geun Lee, Jang-Hoon Ha, Hee-Jun Byeon, Ji-Yun Hong, Ji-Soo Oh
  • Patent number: 9117917
    Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: August 25, 2015
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hyun-Jung Lee, Sung-Haeng Cho, Woo-Geun Lee, Jang-Hoon Ha, Hee-Jun Byeon, Ji-Yun Hong, Ji-Soo Oh
  • Publication number: 20130099240
    Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.
    Type: Application
    Filed: October 12, 2012
    Publication date: April 25, 2013
    Applicant: Samsung Display Co., Ltd.
    Inventors: Hyun-Jung LEE, Sung-Haeng CHO, Woo-Geun LEE, Jang-Hoon HA, Hee-Jun BYEON, Ji-Yun HONG, Ji-Soo OH