Abstract: Disclosed are a photomask, an exposure apparatus, and a method of fabricating a three-dimensional semiconductor memory device using the same. The photomask may include a mask substrate, a first mask pattern on the mask substrate, and an optical path modulation substrate. The optical path modulation substrate may include a first region on a portion of the first mask pattern, and a second region on another portion of the first mask pattern. The second region has a thickness that is less than a thickness of the first region.

Abstract: A resin composition according to an exemplary embodiment of the present disclosure includes a first polyol represented by Chemical Formula 1, a second polyol represented by Chemical Formula 2, and a polyisocyanate, wherein the first polyol and the second polyol have a linear structure without a side chain. each of Y1 to Y4 is H or OH—, at least one of Y1 and Y2 is OH—, at least one of Y3 and Y4 is OH—, each of X1 to X3 is independently a C1-C20 alkyl group, the alkyl group includes or does not include an unsaturated bond, —CH2— in the alkyl group may be substituted or unsubstituted with —CHOH—, and each of n and m is independently 1 to 200.

Abstract: Disclosed are a photomask, an exposure apparatus, and a method of fabricating a three-dimensional semiconductor memory device using the same. The photomask may include a mask substrate, a first mask pattern on the mask substrate, and an optical path modulation substrate. The optical path modulation substrate may include a first region on a portion of the first mask pattern, and a second region on another portion of the first mask pattern. The second region has a thickness that is less than a thickness of the first region.

Abstract: Disclosed is an acrylic adhesive, including an acrylic polymer obtained by polymerizing a mixture of about 120 parts by weight to about 250 parts by weight of acrylic monomers with about 0.1 parts by weight to about 1 parts by weight of an azo initiator, about 0.5 parts by weight to about 1 parts by weight of a filler, about 1.5 parts by weight to about 2.5 parts by weight of a crosslinking agent, and about 0.5 parts by weight to 1 parts by weight of an anti-static agent.

Abstract: A resin composition according to an exemplary embodiment of the present disclosure includes a first polyol represented by Chemical Formula 1, a second polyol represented by Chemical Formula 2, and a polyisocyanate, wherein the first polyol and the second polyol have a linear structure without a side chain. each of Y1 to Y4 is H or OH—, at least one of Y1 and Y2 is OH—, at least one of Y3 and Y4 is OH—, each of X1 to X3 is independently a C1-C20 alkyl group, the alkyl group includes or does not include an unsaturated bond, —CH2— in the alkyl group may be substituted or unsubstituted with —CHOH—, and each of n and m is independently 1 to 200.

Abstract: Disclosed is an acrylic adhesive, including an acrylic polymer obtained by polymerizing a mixture of about 120 parts by weight to about 250 parts by weight of acrylic monomers with about 0.1 parts by weight to about 1 parts by weight of an azo initiator, about 0.5 parts by weight to about 1 parts by weight of a filler, about 1.5 parts by weight to about 2.5 parts by weight of a crosslinking agent, and about 0.5 parts by weight to 1 parts by weight of an anti-static agent.

Abstract: Provided is a method of forming patterns of a semiconductor device, whereby patterns having various widths can be simultaneously formed, and pattern density can be doubled by a double patterning process in a portion of the semiconductor device. In the method of forming patterns of a semiconductor device, a first mold mask pattern and a second mold mask patter having different widths are formed on a substrate. A pair of first spacers covering both sidewalls of the first mold mask pattern and a pair of second spacers covering both sidewalls of the second mold mask pattern are formed. The first mold mask pattern and the second mold mask pattern are removed, and a wide-width mask pattern covering the second spacer is formed. A lower layer is etched using the first spacers, the second spacers, and the wide-width mask pattern as an etch mask.

Abstract: Provided is a method of forming patterns of a semiconductor device, whereby patterns having various widths can be simultaneously formed, and pattern density can be doubled by a double patterning process in a portion of the semiconductor device. In the method of forming patterns of a semiconductor device, a first mold mask pattern and a second mold mask patter having different widths are formed on a substrate. A pair of first spacers covering both sidewalls of the first mold mask pattern and a pair of second spacers covering both sidewalls of the second mold mask pattern are formed. The first mold mask pattern and the second mold mask pattern are removed, and a wide-width mask pattern covering the second spacer is formed. A lower layer is etched using the first spacers, the second spacers, and the wide-width mask pattern as an etch mask.