Abstract: The present invention relates to a process chamber and to a substrate processing device. The process chamber according to one embodiment of the present invention includes: a boat in which a plurality of substrates are vertically stacked apart from each; a chamber housing which raises the boat in order to position the boat in an inner space and horizontally injects a process gas from the sidewall and causes the process gas to flow between the substrates which are stacked apart from each other so as to discharge the process gas; a boat elevation unit which elevates the boat into the chamber housing; and a substrate transfer gate at which one side wall of the chamber housing is penetrated.

Abstract: The present invention relates to a process chamber which includes a substrate heating device. The substrate heating device of the process chamber according to one embodiment of the present invention has a boat in which a plurality of substrates are stacked apart from each other, and a chamber housing in which the boat is positioned in an inner space for process gas to flow between the substrates which are stacked apart from each other on the inner side wall, and the present invention includes a first heating body which generates heat in the lower portion of the boat to heat the substrate. Moreover, the boat comprises an upper plate, a lower plate, a plurality of support bars connecting the upper plate with the lower plate, and a plurality of substrate seat grooves formed on the side walls of the support bars.

Abstract: Heat treatment equipment and a method of driving the same are provided. The heat treatment equipment includes: a process tube having an aperture at one side thereof; a sealing unit for opening or closing the aperture; and a pressure sensor for measuring sealing pressure between the sealing unit and the one side of the process tube. In the heat treatment equipment, the aperture of the process tube can be sealed according to the sealing pressure of the sealing unit so that the process tube can be precisely sealed.

Abstract: An inspection system for inspecting a wafer and an inspection method thereof are provided. The inspection system includes a rotating means for turning and arranging a wafer to an inspection position, an angle measuring means for measuring a rotational angle used by the rotating means to rotate to the inspection position, an inspection apparatus for acquiring inspection data associated with the wafer, and a controller for determining an amending angle from the rotational angle and for amending the inspection data in accordance with the amending angle to calculate amended inspection data, wherein the amended inspection data reflects a state of the wafer on the rotating means.

Abstract: Heat treatment equipment and a method of driving the same are provided. The heat treatment equipment includes: a process tube having an aperture at one side thereof; a sealing unit for opening or closing the aperture; and a pressure sensor for measuring sealing pressure between the sealing unit and the one side of the process tube. In the heat treatment equipment, the aperture of the process tube can be sealed according to the sealing pressure of the sealing unit so that the process tube can be precisely sealed.

Abstract: An inspection system for inspecting a wafer and an inspection method thereof are provided. The inspection system includes a rotating means for turning and arranging a wafer to an inspection position, an angle measuring means for measuring a rotational angle used by the rotating means to rotate to the inspection position, an inspection apparatus for acquiring inspection data associated with the wafer, and a controller for determining an amending angle from the rotational angle and for amending the inspection data in accordance with the amending angle to calculate amended inspection data, wherein the amended inspection data reflects a state of the wafer on the rotating means.

Abstract: A method of forming a hemispherical grain includes cleaning a polysilicon layer of a native oxide in-situ in the processing chamber of the HSG growth reactor. Such a native oxide adversely affects the growing of HSGs from seeds during the thermal treatment performed in the processing chamber. The cleaning is carried out by dry etching the polysilicon layer with plasma. The plasma may be produced from a mixture of fluorine and inert gases having a volumetric ratio within the range of 0.2:100 to 25:100. Such a plasma can be formed by ionizing the gas with an RF power within a range of 20 to 500 Watts. An advantage of using plasma etching to clean the polysilicon of a native oxide is that the plasma etching is an anisotropic process. The present invention is thus particularly useful in the manufacture of a DRAM capacitor.