Abstract: The present disclosure relates to a method of forming a thin film having excellent properties by depositing an organometallic compound (particularly, an organometallic compound containing rare earth metals) and to a thin film formed thereby.

Abstract: Proposed is a vapor deposition precursor composition that enables thin film deposition through vapor deposition. Specifically, proposed is a novel composition applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD), in which the novel composition having excellent reactivity, volatility, and thermal stability, a precursor composition containing the novel composition. Additionally, a method of manufacturing a thin film using the precursor composition is proposed.

Abstract: The present disclosure relates to a vapor deposition compound capable of being deposited into a thin film through vapor deposition. Specifically, the present disclosure relates to a novel compound applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having excellent reactivity, volatility, and thermal stability, a precursor composition containing the novel compound, a method of forming a thin film using the precursor composition, and a thin film formed using the precursor composition.

Abstract: The present invention relates to a method for producing a high yield of an organometallic compound including a step of allowing a metal hexacarbonyl compound to react with a hexahydro-1,3,5-triazine compound, and a thin film having excellent properties, fabricated by depositing the produced organometallic compound.

Abstract: The present disclosure relates to a novel Group 4 metal element-containing compound having excellent thermal stability, a precursor composition including the compound, and a method for manufacturing a thin film using the precursor composition. The novel Group 4 metal element-containing compound according to the present disclosure and the vapor deposition precursor composition including the compound can have excellent thermal stability, realize thin film deposition in a wide temperature range, and reduce residues caused by heat loss, thereby preventing side reactions in a process. Additionally, the vapor deposition precursor composition according to the present disclosure can realize uniform thin film deposition, thereby securing excellent physical properties of the thin film.

Abstract: The present invention relates to a vapor deposition compound capable of being deposited as a thin film through vapor deposition and, in particular, to: an organometal-containing compound which can be applied to an atomic layer deposition (ALD) method or a chemical vapor deposition (CVD) method and has excellent reactivity, volatility, and thermal stability; a precursor composition comprising the organometallic compound; a method for manufacturing a thin film using the precursor composition; and an organometal-containing thin film manufactured using the precursor composition.

Abstract: A method for manufacturing a semiconductor layer is provided. The method for manufacturing a semiconductor layer may include preparing a substrate, and conducting a first unit process of reacting a first precursor including indium (In) and a first reaction source and a second unit process of reacting a second precursor including gallium (Ga) and a second reaction source to form a semiconductor layer including the indium and the gallium on the substrate.

Abstract: The present invention relates to a method for producing a high yield of an organometallic compound including a step of allowing a metal hexacarbonyl compound to react with a hexahydro-1,3,5-triazine compound, and a thin film having excellent properties, fabricated by depositing the produced organometallic compound.

Abstract: The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and particularly to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having superior thermal stability and reactivity, and a method of preparing the same.

Abstract: The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.

Abstract: The present invention relates to a compound that is capable of being used in thin-film deposition using vapor deposition. Particularly, the present invention relates to a rare earth compound, which is capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which has excellent thermal stability and reactivity, a rare earth precursor including the same, a method of manufacturing the same, and a method of forming a thin film using the same.

Abstract: The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and more particularly to a novel cobalt precursor, which can be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and exhibits superior reactivity, volatility and thermal stability, a method of preparing the same and a method of manufacturing a thin film using the same.

Abstract: The present invention relates to a compound that is capable of being used in thin-film deposition using vapor deposition. Particularly, the present invention relates to a rare earth compound, which is capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which has excellent thermal stability and reactivity, a rare earth precursor including the same, a method of manufacturing the same, and a method of forming a thin film using the same.

Abstract: The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.

Abstract: The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and more particularly to a novel cobalt precursor, which can be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and exhibits superior reactivity, volatility and thermal stability, a method of preparing the same and a method of manufacturing a thin film using the same.

Abstract: The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.

Abstract: The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.

Abstract: The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and particularly to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having superior thermal stability and reactivity, and a method of preparing the same.

Abstract: The present invention relates to a method for manufacturing a high-purity silicon nitride thin film using plasma atomic layer deposition. More specifically, the present invention can realize improved thin film efficiency and a step coverage by performing a two-stage plasma excitation step and can provide a high-purity silicon nitride thin film with an improved deposition rate despite a low film-forming temperature.

Abstract: Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.