Abstract: Embodiments provide a display device that includes a substrate, a transistor disposed on the substrate, and a light emitting device that is electrically connected to the transistor. The light emitting device includes a first electrode that is electrically connected to the transistor, a second electrode disposed on the first electrode, a light emitting layer disposed between the first electrode and the second electrode, a hole transport layer disposed between the first electrode and the light emitting layer, and an electron blocking layer disposed between the hole transport layer and the light emitting layer. Mobility of the hole transport layer is equal to or less than about 2.0*10?3 cm2/(Vs), and a real part of impedance of the light emitting device is equal to or less than about 100?, in a frequency range of about 105 Hz to about 106 Hz.

Abstract: It is disclosed a blood glucose prediction system and method using saliva-based artificial intelligence deep learning technique.

Abstract: Provided are a thermal battery system and an ignition method of the same, wherein the thermal battery system includes: a thermal battery assembly including a plurality of thermal batteries arranged in series and in parallel; an ignition circuit connected to the plurality of thermal batteries in the thermal battery assembly; and a control unit configured to control the ignition circuit such that each of the plurality of thermal batteries in the thermal battery assembly is selectively ignited, wherein the control unit is configured to selectively ignite one of the plurality of thermal batteries in an active matrix manner by controlling an ignition circuit.

Abstract: A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.