Abstract: A method to planarize a partially completed semiconductor integrated device includes a first process to etch a first portion of a layer of photoresist on the device, a second process to etch the remaining layer of photoresist and to etch a first portion of an oxide on the device, and a third process to etch a second portion of the oxide layer on the device. The second process achieves an etch rate of approximately 5000 .ANG. per minute and the third process achieves an etch rate of approximately 2000 .ANG. per minute. The second process etches 80% of a targeted layer of oxide and the third process etches the remaining portion of the targeted layer of oxide.

Abstract: The process parameters according to which the AMT 8310 RIE plasma etcher operates are altered so as to increase the nitride to oxide selectivity of the AMT 8310 RIE plasma etcher from approximately 3:1 to approximately 5:1, thereby allowing for the fabrication of modern semiconductor devices having oxide films significantly less thick than 325 .ANG.. In this manner, the present invention eliminates the need for an expensive upgrade in etching equipment to realize an increase in nitride to oxide selectivity.

Abstract: The process parameters according to which the AMT 8310 RIE plasma etcher operates are altered so as to increase the nitride to oxide selectivity of the AMT 8310 RIE plasma etcher from approximately 3:1 to approximately 5:1, thereby allowing for the fabrication of modern semiconductor devices having oxide films significantly less thick than 325 .ANG.. In this manner, the present invention eliminates the need for an expensive upgrade in etching equipment to realize an increase in nitride to oxide selectivity. The semiconductor device is electrically biased at 100-300 volts, and freon and oxygen have a flow rate ratio of approximately 1:1.