Patents by Inventor Jang Mi KIM
Jang Mi KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240119901Abstract: A pixel including: a light emitting element; a first transistor connected between a first power source and a second node; a first capacitor connected to a first node or a second node and a third node; a second transistor between the third node and a data line, the second transistor turned on by a first scan signal; a third transistor between the first and second nodes, the third transistor turned on by a second scan signal; a fifth transistor between the first power source and the first transistor, the fifth transistor turned on by a first emission control signal; a sixth transistor between the second node and the light emitting element, the sixth transistor turned on by a second emission control signal; and an eighth transistor between the second node and a second emission control line, the eighth transistor turned on by a fourth scan signal.Type: ApplicationFiled: December 13, 2023Publication date: April 11, 2024Inventors: Min Jae JEONG, Jun Hyun PARK, Hyun Joon KIM, Kyung Hoon CHUNG, Jang Mi KANG, Hae Min KIM
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Patent number: 11922871Abstract: An emissive display device includes a display area which includes a plurality of pixels, and a driver disposed at a side of the display area, where the driver includes at least two emission signal stages disposed in one row, and an input signal line connected to the emission signal stages, and the at least two emission signal stages are connected to the same input signal line.Type: GrantFiled: July 29, 2021Date of Patent: March 5, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Hae Min Kim, Min Jae Jeong, Jang Mi Kang, Hyun Joon Kim, Jun Hyun Park, Cheol-Gon Lee
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Patent number: 10304990Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.Type: GrantFiled: November 2, 2016Date of Patent: May 28, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Heon Han, Dong Yul Lee, Seung Hyun Kim, Jang Mi Kim, Suk Ho Yoon, Sang Jun Lee
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Patent number: 10153397Abstract: A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×1016/cm3 and less than or equal to 1.0×1018/cm3. Thus, the semiconductor light-emitting device may have increased light output and reliability.Type: GrantFiled: August 29, 2017Date of Patent: December 11, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-seok Choi, Min-ho Kim, Jeong-wook Lee, Jai-won Jean, Chul-min Kim, Jae-deok Jeong, Min-hwan Kim, Jang-mi Kim
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Patent number: 10134949Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.Type: GrantFiled: August 16, 2017Date of Patent: November 20, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jai Won Jean, Min Ho Kim, Min Hwan Kim, Jang Mi Kim, Chul Min Kim, Jeong Wook Lee, Jae Deok Jeong, Yong Seok Choi
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Publication number: 20180198019Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.Type: ApplicationFiled: August 16, 2017Publication date: July 12, 2018Inventors: Jai Won JEAN, Min Ho KIM, Min Hwan KIM, Jang Mi KIM, Chul Min KIM, Jeong Wook LEE, Jae Deok JEONG, Yong Seok CHOI
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Publication number: 20180190863Abstract: A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×1016/cm3 and less than or equal to 1.0×1018/cm3. Thus, the semiconductor light-emitting device may have increased light output and reliability.Type: ApplicationFiled: August 29, 2017Publication date: July 5, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Yong-seok CHOI, Min-ho KIM, Jeong-wook LEE, Jai-won JEAN, Chul-min KIM, Jae-deok JEONG, Min-hwan KIM, Jang-mi KIM
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Publication number: 20170077346Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.Type: ApplicationFiled: November 2, 2016Publication date: March 16, 2017Inventors: Sang Heon HAN, Dong Yul LEE, Seung Hyun KIM, Jang Mi KIM, Suk Ho YOON, Sang Jun LEE
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Patent number: 9564316Abstract: A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.Type: GrantFiled: December 22, 2014Date of Patent: February 7, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Yul Lee, Sang Heon Han, Seung Hyun Kim, Jang Mi Kim, William Solari, Hyun Wook Shim, Suk Ho Yoon
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Patent number: 9502605Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.Type: GrantFiled: May 15, 2015Date of Patent: November 22, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Heon Han, Dong Yul Lee, Seung Hyun Kim, Jang Mi Kim, Suk Ho Yoon, Sang Jun Lee
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Publication number: 20160099378Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.Type: ApplicationFiled: May 15, 2015Publication date: April 7, 2016Inventors: Sang Heon HAN, Dong Yul LEE, Seung Hyun KIM, Jang Mi KIM, Suk Ho YOON, Sang Jun LEE
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Publication number: 20150311062Abstract: A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.Type: ApplicationFiled: December 22, 2014Publication date: October 29, 2015Inventors: Dong Yul LEE, Sang Heon HAN, Seung Hyun KIM, Jang Mi KIM, William SOLARI, Hyun Wook SHIM, Suk Ho YOON
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Publication number: 20130236634Abstract: There is provided a chemical vapor deposition apparatus, including: a reaction chamber including a support part having a wafer placed thereon and a gas supply part supplying a process gas to a reactive space formed above the support part to allow a thin film to be grown on a surface of the wafer; a heat exchanger changing a temperature of the process gas, supplied to the reactive space through the gas supply part, to allow the process gas to be maintained at a set temperature: and a controller regulating a flow rate of the process gas, and detecting a temperature difference between a temperature of the process gas and the set temperature to thereby control the heat exchanger to supply the process gas to the reactive space while the process gas is maintained at a reference temperature set according to each stage.Type: ApplicationFiled: March 8, 2013Publication date: September 12, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Min CHOI, Dong Ju LEE, Heon Ho LEE, Jang Mi KIM, Ok Hyun KIM