Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: Disclosed herein is a a light emitting diode lamp including: a base having a power terminal capable of being electrically connected to an external alternating current (AC) power source; a housing coupled to the base and formed in a hollow structure; a light emitting diode package installed in the housing; the power supply module supplying an external AC power to the light emitting diode package; and a transparent insulating heat radiation liquid configured to radiate a heat generated from the light emitting diode package and the power supply module by impregnating the light emitting diode package and the power supply module therein and filled in the housing having the hollow structure.

Abstract: Disclosed herein is a a light emitting diode lamp including: a base having a power terminal capable of being electrically connected to an external alternating current (AC) power source; a housing coupled to the base and formed in a hollow structure; a light emitting diode package installed in the housing; the power supply module supplying an external AC power to the light emitting diode package; and a transparent insulating heat radiation liquid configured to radiate a heat generated from the light emitting diode package and the power supply module by impregnating the light emitting diode package and the power supply module therein and filled in the housing having the hollow structure.

Abstract: Disclosed herein is a method of manufacturing a color-controlled sapphire, comprising: vaporizing a metal material, irradiating the vaporized metal material with electron beams or high-frequency waves to form the vaporized metal material into a plasma state, and then implanting the metal ions into a sapphire by extracting the metal ions from the plasma and accelerating the metal ions (step 1); and heat-treating the sapphire implanted with the metal plasma ions in an oxygen atmosphere or in air (step 2). According to the method of manufacturing a sapphire of the present invention, a sapphire, which can exhibit various colors, can be manufactured by implanting the ions, which can cause optical band gap changes into the sapphire, and a sapphire, which cannot be damaged by radiation and can exhibit colors uniformly, can be manufactured by conducting heat treatment under an oxygen atmosphere.

Abstract: Disclosed herein is a method of manufacturing a color-controlled sapphire, comprising: vaporizing a metal material, irradiating the vaporized metal material with electron beams or high-frequency waves to form the vaporized metal material into a plasma state, and then implanting the metal ions into a sapphire by extracting the metal ions from the plasma and accelerating the metal ions (step 1); and heat-treating the sapphire implanted with the metal plasma ions in an oxygen atmosphere or in air (step 2). According to the method of manufacturing a sapphire of the present invention, a sapphire, which can exhibit various colors, can be manufactured by implanting the ions, which can cause optical band gap changes into the sapphire, and a sapphire, which cannot be damaged by radiation and can exhibit colors uniformly, can be manufactured by conducting heat treatment under an oxygen atmosphere.