Abstract: In a method of predicting a position of an object at a future time point for a vehicle, video image information at a current time point and at a plurality of time points before the current time point acquired through a camera of the vehicle may be extracted as semantic segmentation image. A mask image imaging an attribute and position information of an object present in each of the video images may be extracted. A position distribution of the object may be predicted by deriving a plurality of hypotheses for a position of the object at a future time point through deep learning by receiving video images at the current time point and the time points before the current time point, a plurality of semantic segmentation images, a plurality of mask images, and ego-motion information of the vehicle, and calculating the plurality of hypotheses as a Gaussian mixture probability distribution.

Abstract: The present invention relates to a multi-layered transparent electrode having a metal nano hole pattern layer. The multi-layered transparent electrode may include a lower oxide layer, a metal nano hole pattern layer disposed on the lower oxide layer, and an upper oxide layer disposed on the metal nano hole pattern layer. By adjusting the pattern period and nano hole size of the metal nano hole pattern layer, transmittance of the multi-layered transparent electrode may be enhanced in a specific wavelength region through surface plasmon, which is a phenomena caused by the metal nanohole pattern layer. In addition, optimized sheet resistance may be implemented in a multi-layered transparent electrode having the metal nano hole pattern layer by adjusting the hole size. Thereby, electrical characteristics of a device employed the multi-layered transparent electrode may be enhanced.

Abstract: Disclosed herein are a ZnO film structure and a method of forming the same. Dislocation density of a ZnO film grown through epitaxial lateral overgrowth (ELOG) is minimized. In order to block a chemical reaction between the ZnO film and a mask layer at the time of performing the ELOG, a material of the mask layer is AlF3, NaF2, SrF, or MgF2. Therefore, the chemical reaction between ZnO and the mask layer is blocked and a transfer of dislocation from a substrate is also blocked.

Abstract: Disclosed herein are a ZnO film structure and a method of forming the same. Dislocation density of a ZnO film grown through epitaxial lateral overgrowth (ELOG) is minimized. In order to block a chemical reaction between the ZnO film and a mask layer at the time of performing the ELOG, a material of the mask layer is AlF3, NaF2, SrF, or MgF2. Therefore, the chemical reaction between ZnO and the mask layer is blocked and a transfer of dislocation from a substrate is also blocked.

Abstract: Disclosed herein is a method of forming a p-type zinc oxide thin film. A zinc oxide layer and an antimony oxide layer are alternately stacked one above another on a substrate, forming a superlattice layer. The superlattice layer is modified into a p-type zinc oxide thin film by annealing. Upon annealing, zinc atoms of the zinc oxide layer are diffused into the antimony oxide layer and antimony atoms of the antimony oxide layer are diffused into the zinc oxide layer.

Abstract: Disclosed herein is a method of forming a p-type zinc oxide thin film. A zinc oxide layer and an antimony oxide layer are alternately stacked one above another on a substrate, forming a superlattice layer. The superlattice layer is modified into a p-type zinc oxide thin film by annealing. Upon annealing, zinc atoms of the zinc oxide layer are diffused into the antimony oxide layer and antimony atoms of the antimony oxide layer are diffused into the zinc oxide layer.