Patents by Inventor Jang-yeong Kwon

Jang-yeong Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device including single crystal silicon layer
    Patent number: 7772711
    Abstract: A semiconductor device including a substrate, a P-MOS single crystal TFT formed on the substrate, and an N-MOS single crystal TFT formed on the P-MOS single crystal TFT. The source region of the P-MOS single crystal TFT and the source region of the N-MOS single crystal TFT may be connected to each other. The P-MOS single crystal TFT and the N-MOS single crystal TFT may share a common gate. Also, the P-MOS single crystal TFT may include a single crystal silicon layer with a crystal plane of (100) and a crystal direction of <100>. The N-MOS single crystal TFT may include a single crystal silicon layer having the same crystal direction as the single crystal silicon layer of the P-MOS single crystal TFT and having a tensile stress greater than the single crystal silicon layer of the P-MOS single crystal TFT.
    Type: Grant
    Filed: May 9, 2006
    Date of Patent: August 10, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Takashi Noguchi, Hans S. Cho, Wenxu Xianyu, Do-young Kim, Jang-yeong Kwon, Huaxiang Yin, Kyung-bae Park, Xiaoxin Zhang
  • Semiconductor device including single crystal silicon layer and method of manufacturing semiconductor device
    Publication number: 20060267100
    Abstract: A semiconductor device including a substrate, a P-MOS single crystal TFT formed on the substrate, and an N-MOS single crystal TFT formed on the P-MOS single crystal TFT. The source region of the P-MOS single crystal TFT and the source region of the N-MOS single crystal TFT may be connected to each other. The P-MOS single crystal TFT and the N-MOS single crystal TFT may share a common gate. Also, the P-MOS single crystal TFT may include a single crystal silicon layer with a crystal plane of (100) and a crystal direction of <100>. The N-MOS single crystal TFT may include a single crystal silicon layer having the same crystal direction as the single crystal silicon layer of the P-MOS single crystal TFT and having a tensile stress greater than the single crystal silicon layer of the P-MOS single crystal TFT.
    Type: Application
    Filed: May 9, 2006
    Publication date: November 30, 2006
    Inventors: Takashi Noguchi, Hans Cho, Wenxu Xianyu, Do-young Kim, Jang-yeong Kwon, Huaxiang Yin, Kyung-bae Park, Xiaozin Zhang