Patents by Inventor Jang-Yup Kim

Jang-Yup Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a semiconductor memory device using hemispherical grain silicon
    Patent number: 6444538
    Abstract: A semiconductor device for manufacturing a semiconductor memory cell includes the steps of: a) preparing an active matrix provided with at least one transistor, a plurality of conductive plugs electrically connected to the transistors and an insulating layer formed around the conductive plugs; b) forming a supporting layer, made of carbon, on top of the active matrix and patterned into a predetermined configuration, thereby obtaining a patterned supporting layer; c) forming bottom electrodes on the patterned supporting layer; and d) removing the patterned supporting layer.
    Type: Grant
    Filed: December 14, 2000
    Date of Patent: September 3, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Se-Han Kwon, Jang-Yup Kim
  • Method for manufacturing a semiconductor memory device using hemispherical grain silicon
    Publication number: 20010006837
    Abstract: A semiconductor device for manufacturing a semiconductor memory cell includes the steps of: a) preparing an active matrix provided with at least one transistor, a plurality of conductive plugs electrically connected to the transistors and an insulating layer formed around the conductive plugs; b) forming a supporting layer, made of carbon, on top of the active matrix and patterned into a predetermined configuration, thereby obtaining a patterned supporting layer; c) forming bottom electrodes on the patterned supporting layer; and d) removing the patterned supporting layer.
    Type: Application
    Filed: December 14, 2000
    Publication date: July 5, 2001
    Inventors: Se-Han Kwon, Jang-Yup Kim