Abstract: RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

Abstract: RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

Abstract: RF amplifiers are provided that include an interconnection structure and a Group III nitride-based RF amplifier die that is mounted on top of the interconnection structure. The Group III nitride-based RF amplifier die includes a semiconductor layer structure. A plurality of unit cell transistors are provided in an upper portion of the semiconductor layer structure, and a gate terminal, a drain terminal and a source terminal are provided on a lower surface of the semiconductor layer structure that is adjacent the interconnection structure.

Abstract: RF amplifiers are provided that include an interconnection structure and a Group III nitride-based RF amplifier die that is mounted on top of the interconnection structure. The Group III nitride-based RF amplifier die includes a semiconductor layer structure. A plurality of unit cell transistors are provided in an upper portion of the semiconductor layer structure, and a gate terminal, a drain terminal and a source terminal are provided on a lower surface of the semiconductor layer structure that is adjacent the interconnection structure.

Abstract: RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

Abstract: In a Doherty amplifier, outputs of first (main) and second (peak) transistors are connected by a combined impedance inverter and harmonic termination circuit. The harmonic termination circuit incorporates a predetermined part of the impedance inverter, and provides a harmonic load impedance at a targeted harmonic frequency (e.g., the second harmonic). Control of the amplitude and phase of the harmonic load impedance facilitates shaping of the drain current and voltage waveforms to maximize gain and efficiency, while maintaining a good load modulation at a fundamental frequency. Particularly for Group III nitride semiconductors, such as GaN, both harmonic control and output impedance matching circuits may be eliminated from the outputs of each transistor. The combined impedance inverter and harmonic termination circuit reduces the amplifier circuit footprint, for high integration and low power consumption.

Abstract: In a Doherty amplifier, outputs of first (main) and second (peak) transistors are connected by a combined impedance inverter and harmonic termination circuit. The harmonic termination circuit incorporates a predetermined part of the impedance inverter, and provides a harmonic load impedance at a targeted harmonic frequency (e.g., the second harmonic). Control of the amplitude and phase of the harmonic load impedance facilitates shaping of the drain current and voltage waveforms to maximize gain and efficiency, while maintaining a good load modulation at a fundamental frequency. Particularly for Group III nitride semiconductors, such as GaN, both harmonic control and output impedance matching circuits may be eliminated from the outputs of each transistor. The combined impedance inverter and harmonic termination circuit reduces the amplifier circuit footprint, for high integration and low power consumption.

Abstract: A hybrid vehicle may include a linear engine controlled by HCCI (Homogeneous Charge Compression Ignition) combustion in an operation section where an engine power may be used for generating electricity after being started and reaching up to a predetermined RPM, and a motor-combined generator engaged to the liner engine and starting the linear engine and charging a battery by converting an entire engine power of the linear engine generated by the HCCI combustion into electricity generation power.

Abstract: A hybrid vehicle may include a linear engine controlled by HCCI (Homogeneous Charge Compression Ignition) combustion in an operation section where an engine power may be used for generating electricity after being started and reaching up to a predetermined RPM, and a motor-combined generator engaged to the liner engine and starting the linear engine and charging a battery by converting an entire engine power of the linear engine generated by the HCCI combustion into electricity generation power.

Abstract: A Doherty power amplifying apparatus includes a harmonic-controlled Doherty amplifier; and an input matching unit and an output matching unit for input matching and output matching the harmonic-controlled Doherty amplifier, respectively. The harmonic-controlled Doherty amplifier includes a carrier amplifier; a peaking amplifier arranged in parallel to the carrier amplifier; and a harmonic control circuit, arranged in front of the output matching unit, for controlling a harmonic component of an output of the Doherty amplifier to enable the Doherty amplifier to perform a switching or saturation operation.

Abstract: A Doherty power amplifying apparatus includes a harmonic-controlled Doherty amplifier; and an input matching unit and an output matching unit for input matching and output matching the harmonic-controlled Doherty amplifier, respectively. The harmonic-controlled Doherty amplifier includes a carrier amplifier; a peaking amplifier arranged in parallel to the carrier amplifier; and a harmonic control circuit, arranged in front of the output matching unit, for controlling a harmonic component of an output of the Doherty amplifier to enable the Doherty amplifier to perform a switching or saturation operation.

Abstract: A power amplifying apparatus includes a Doherty amplifier having a carrier amplifier and a peaking amplifier connected in parallel, each having an input/output matching circuit and an asymmetric power driver for driving the carrier amplifier and the peaking amplifier using an asymmetric power driver.

Abstract: A power amplifying apparatus includes a Doherty amplifier having a carrier amplifier and a peaking amplifier connected in parallel, each having an input/output matching circuit and an asymmetric power driver for driving the carrier amplifier and the peaking amplifier using an asymmetric power driver.