Patents by Inventor Jangsaeng KIM

Jangsaeng KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12099919
    Abstract: A neuromorphic system enabling on-chip training includes: synapse arrays where synapse devices are arranged in a cross-bar shape; a final neuron layer including a forward neuron and a backward neuron and connected to an output terminal of a last synapse array; neuron layers including a forward neuron, a backward neuron, and a memory storing signals used during a weighted value update operation of a neural network and arranged between the remaining synapse arrays except for a first and last synapse arrays; and an error calculation circuit detecting and outputting an error value of a target signal and an output signal of the forward neuron of the final neuron layer. Conductances of the synapse devices represent weighted values of the neural network and are changed by the weighted value update operation. Each synapse device is configured with a flash device, and the neuron layers are implemented with ultra-miniature devices.
    Type: Grant
    Filed: January 5, 2021
    Date of Patent: September 24, 2024
    Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Jong-Ho Lee, Dongseok Kwon, Jangsaeng Kim
  • Publication number: 20230057424
    Abstract: Provided is a 3D capacitor stack and a method for manufacturing the same. The 3D capacitor stack comprises: a drain line electrode having a pillar shape provided in a vertical direction on a substrate surface; a plurality of first insulating layers positioned in first region of an outer circumferential surface of the drain line electrode; a plurality of drains positioned in second regions of an outer circumferential surface of the drain line electrode; a plurality of insulator stacks positioned on side surfaces of the drains; and a plurality of word lines positioned on side surfaces of the insulator stacks.
    Type: Application
    Filed: August 16, 2022
    Publication date: February 23, 2023
    Inventors: Jong-Ho LEE, Young-tak SEO, Soochang LEE, Seongbin OH, Jangsaeng KIM
  • Publication number: 20230059685
    Abstract: Provided is a 3D synapse device stack, a 3D stackable synapse array using the same, and a method for manufacturing the 3D synapse device stack.
    Type: Application
    Filed: August 16, 2022
    Publication date: February 23, 2023
    Inventors: Jong-Ho LEE, Young-tak SEO, Soochang LEE, Seongbin OH, Jangsaeng KIM
  • Publication number: 20230058502
    Abstract: Provided is a 3D stackable synapse string, a 3D stackable synapse array using the same, and a method for manufacturing the 3D stackable synapse string.
    Type: Application
    Filed: August 16, 2022
    Publication date: February 23, 2023
    Inventors: Jong-Ho LEE, Young-tak SEO, Soochang LEE, Seongbin OH, Jangsaeng KIM
  • Publication number: 20230053693
    Abstract: Provided is a 3D synapse device stack, a 3D stackable synapse array using the same, and a method for manufacturing the 3D synapse device stack.
    Type: Application
    Filed: August 16, 2022
    Publication date: February 23, 2023
    Inventors: Jong-Ho LEE, Young-tak SEO, Soochang LEE, Seongbin OH, Jangsaeng KIM
  • Publication number: 20210232900
    Abstract: A neuromorphic architecture enabling on-chip training includes: synapse arrays where synapse devices are arranged in a cross-bar shape; a final neuron layer including a forward neuron and a backward neuron and connected to an output terminal of a last synapse array; neuron layers including a forward neuron, a backward neuron, and a memory storing signals used during a weighted value update operation of a neural network and arranged between the remaining synapse arrays except for a first and last synapse arrays; and an error calculation circuit detecting and outputting an error value of a target signal and an output signal of the forward neuron of the final neuron layer. Conductances of the synapse devices represent weighted values of the neural network and are changed by the weighted value update operation. Each synapse device is configured with a flash device, and the neuron layers are implemented with ultra-miniature devices.
    Type: Application
    Filed: January 5, 2021
    Publication date: July 29, 2021
    Inventors: Jong-Ho LEE, Dongseok KWON, Jangsaeng KIM