Patents by Inventor Jann-Shyang Liang

Jann-Shyang Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for wet etching of high k thin film at low temperature
    Patent number: 7115526
    Abstract: The present invention discloses an electrode structure of a light emitted diode and manufacturing method of the electrodes. After formed a pn junction of a light emitted diode on a substrate, a layer of SiO2 is deposited on the periphery of the die of the LED near the scribe line of the wafer, then a transparent conductive layer is deposited blanketly, then a layer of gold or AuGe etc. is formed with an opening on the center of the die. After forming alloy with the semiconductor by heat treatment to form ohmic contact, a strip of aluminum (Al) is formed on one side of the die on the front side for wire bonding and to be the positive electrode of the LED. The negative electrode is formed on the substrate by metal contact.
    Type: Grant
    Filed: March 18, 2002
    Date of Patent: October 3, 2006
    Assignee: Grand Plastic Technology Corporation Taiwan
    Inventors: Hsieh Yue Ho, Chih-Cheng Wang, Hsiao Shih-Yi, Kang Tsung-Kuei, Bing-Yue Tsui, Chih-Feng Huang, Jann-Shyang Liang, Ming-Huan Tsai, Hun-Jan Tao, Baw-ching Perng
  • Method for wet etching of high k thin film at low temperature
    Publication number: 20030148625
    Abstract: The present invention discloses an electrode structure of a light emitted diode and manufacturing method of the electrodes. After formed a pn junction of a light emitted diode on a substrate, a layer of SiO2 is deposited on the periphery of the die of the LED near the scribe line of the wafer, then a transparent conductive layer is deposited blanketly, then a layer of gold or AuGe etc. is formed with an opening on the center of the die. After forming alloy with the semiconductor by heat treatment to form ohmic contact, a strip of aluminum (Al) is formed on one side of the die on the front side for wire bonding and to be the positive electrode of the LED. The negative electrode is formed on the substrate by metal contact.
    Type: Application
    Filed: March 18, 2002
    Publication date: August 7, 2003
    Inventors: Hsieh Yue Ho, Chih-Cheng Wang, Hsiao Shih-Yi, Kang Tsung-Kuei, Bing-Yue Tsui, Chih-Feng Huang, Jann-Shyang Liang, Ming-Huan Tsai, Hun-Jan Tao, Baw-Ching Perng