Patents by Inventor Jannier Maximo Roiz Wilson

Jannier Maximo Roiz Wilson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220181061
    Abstract: The present invention comprises Magnetic Tunnel Junctions and Bit-Patterned Media with a warped geometry with the purpose of attaining large thermal stability factors and dramatically increasing the scalability of the magnetic bits while still allowing the reduction of switching current density and switching magnetic field, and also increasing switching speed. The warped shape allows providing thermal stability to the bits through dynamic exchange energy barrier and also by providing additional net magnetic anisotropy through shape-induced reduction of the demagnetization field. The dynamic exchange energy barrier in turn allows engineering the damping torque and the free-layer's magnetic parameters to a much larger extent than the current planar technology. It also allows much faster magnetic-field-induced switching of patterned bits than it is possible with current hard disk drive technology, through the use of precession torque instead of conventional damping torque.
    Type: Application
    Filed: December 8, 2020
    Publication date: June 9, 2022
    Inventor: Jannier Maximo Roiz-Wilson
  • Publication number: 20180261269
    Abstract: The present invention sets forth a new approach to Spin Transfer Torque MRAM that relies on 3D shape anisotropy and bulk-like ferromagnetic material properties in the free-layer to lower the write current and allow high TMR to a great extent independently of cell size and for any desired thermal stability of the cell.
    Type: Application
    Filed: January 2, 2015
    Publication date: September 13, 2018
    Inventor: Jannier Maximo Roiz Wilson
  • Patent number: 9093139
    Abstract: A magnetic memory cell is provided. The cell comprises first and second free layers; and an intermediate layer separating the first and second free layers, wherein the first and second free layers are magnetostatically coupled.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: July 28, 2015
    Assignee: III HOLDINGS 1, LLC
    Inventor: Jannier Maximo Roiz Wilson
  • Publication number: 20150023096
    Abstract: A magnetic memory cell is provided. The cell comprises first and second free layers; and an intermediate layer separating the first and second free layers, wherein the first and second free layers are magnetostatically coupled.
    Type: Application
    Filed: April 9, 2012
    Publication date: January 22, 2015
    Applicant: MagSil Corporation
    Inventor: Jannier Maximo Roiz Wilson
  • Patent number: 8320175
    Abstract: Disclosed is a nonvolatile magnetic memory cell, comprising: a) a switchable magnetic element; b) a word line and a bit line to energize the switchable magnetic element; and c) a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein.
    Type: Grant
    Filed: February 26, 2010
    Date of Patent: November 27, 2012
    Assignee: MagSil Corporation
    Inventors: Krishnakumar Mani, Jannier Maximo Roiz Wilson, Kimihiro Satoh
  • Publication number: 20100219492
    Abstract: Disclosed is a Magnetic Tunnel Junction (MTJ) stack usable in a nonvolatile magnetic memory array of MTJ stacks, the MTJ stack comprising: a) a fixed ferromagnetic layer having its magnetic moment fixed in a preferred direction in the presence of an applied magnetic field caused by a current; b) an insulating tunnel barrier layer in contact with the fixed ferromagnetic layer; and c) a free ferromagnetic layer in contact with the insulating tunnel barrier layer, the free ferromagnetic layer comprising a synthetic anti-ferromagnet (SAF) stack comprising i) at least three ferromagnetic layers arranged anti-ferromagnetically relative to the next, and ii) at least two coupling layers, wherein the at least three ferromagnetic layers are separated by the at least two coupling layers.
    Type: Application
    Filed: February 26, 2010
    Publication date: September 2, 2010
    Inventor: Jannier Maximo Roiz Wilson
  • Publication number: 20100220524
    Abstract: Disclosed is a nonvolatile magnetic memory cell, comprising: a) a switchable magnetic element; b) a word line and a bit line to energize the switchable magnetic element; and c) a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein.
    Type: Application
    Filed: February 26, 2010
    Publication date: September 2, 2010
    Inventors: Krishnakumar Mani, Jannier Maximo Roiz Wilson, Kimihiro Satoh
  • Patent number: 7787289
    Abstract: Embodiments of the present invention disclose an MRAM device having a plurality of magnetic memory cells grouped into words, and write conductors for carrying write currents to write to the memory cells, wherein at least some of the write conductors have a reduced cross-sectional area in the vicinity of a group of memory cells.
    Type: Grant
    Filed: December 3, 2007
    Date of Patent: August 31, 2010
    Assignee: Magsil Corporation
    Inventors: Krishnakumar Mani, Jannier Maximo Roiz Wilson, Anil Gupta, Kimihiro Satoh
  • Publication number: 20090141542
    Abstract: Embodiments of the present invention disclose an MRAM device having a plurality of magnetic memory cells grouped into words, and write conductors for carrying write currents to write to the memory cells, wherein at least some of the write conductors have a reduced cross-sectional area in the vicinity of a group of memory cells.
    Type: Application
    Filed: December 3, 2007
    Publication date: June 4, 2009
    Inventors: Krishnakumar Mani, Jannier Maximo Roiz Wilson, Anil Gupta, Kimihiro Satoh
  • Publication number: 20090128966
    Abstract: Embodiments of the invention magnetic memory device, comprising: a magnetic tunnel junction (MTJ) which includes a Magnetic Tunnel Junction (MTJ) stack which has one of a crescent-shaped profile and an elbow-shaped profile in cross-section.
    Type: Application
    Filed: October 10, 2008
    Publication date: May 21, 2009
    Inventors: Krishnakumar Mani, Jannier Maximo Roiz Wilson