Abstract: The present invention comprises Magnetic Tunnel Junctions and Bit-Patterned Media with a warped geometry with the purpose of attaining large thermal stability factors and dramatically increasing the scalability of the magnetic bits while still allowing the reduction of switching current density and switching magnetic field, and also increasing switching speed. The warped shape allows providing thermal stability to the bits through dynamic exchange energy barrier and also by providing additional net magnetic anisotropy through shape-induced reduction of the demagnetization field. The dynamic exchange energy barrier in turn allows engineering the damping torque and the free-layer's magnetic parameters to a much larger extent than the current planar technology. It also allows much faster magnetic-field-induced switching of patterned bits than it is possible with current hard disk drive technology, through the use of precession torque instead of conventional damping torque.

Abstract: The present invention sets forth a new approach to Spin Transfer Torque MRAM that relies on 3D shape anisotropy and bulk-like ferromagnetic material properties in the free-layer to lower the write current and allow high TMR to a great extent independently of cell size and for any desired thermal stability of the cell.

Abstract: A magnetic memory cell is provided. The cell comprises first and second free layers; and an intermediate layer separating the first and second free layers, wherein the first and second free layers are magnetostatically coupled.

Abstract: A magnetic memory cell is provided. The cell comprises first and second free layers; and an intermediate layer separating the first and second free layers, wherein the first and second free layers are magnetostatically coupled.

Abstract: Disclosed is a nonvolatile magnetic memory cell, comprising: a) a switchable magnetic element; b) a word line and a bit line to energize the switchable magnetic element; and c) a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein.

Abstract: Disclosed is a nonvolatile magnetic memory cell, comprising: a) a switchable magnetic element; b) a word line and a bit line to energize the switchable magnetic element; and c) a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein.

Abstract: Disclosed is a Magnetic Tunnel Junction (MTJ) stack usable in a nonvolatile magnetic memory array of MTJ stacks, the MTJ stack comprising: a) a fixed ferromagnetic layer having its magnetic moment fixed in a preferred direction in the presence of an applied magnetic field caused by a current; b) an insulating tunnel barrier layer in contact with the fixed ferromagnetic layer; and c) a free ferromagnetic layer in contact with the insulating tunnel barrier layer, the free ferromagnetic layer comprising a synthetic anti-ferromagnet (SAF) stack comprising i) at least three ferromagnetic layers arranged anti-ferromagnetically relative to the next, and ii) at least two coupling layers, wherein the at least three ferromagnetic layers are separated by the at least two coupling layers.

Abstract: Embodiments of the present invention disclose an MRAM device having a plurality of magnetic memory cells grouped into words, and write conductors for carrying write currents to write to the memory cells, wherein at least some of the write conductors have a reduced cross-sectional area in the vicinity of a group of memory cells.

Abstract: Embodiments of the present invention disclose an MRAM device having a plurality of magnetic memory cells grouped into words, and write conductors for carrying write currents to write to the memory cells, wherein at least some of the write conductors have a reduced cross-sectional area in the vicinity of a group of memory cells.

Abstract: Embodiments of the invention magnetic memory device, comprising: a magnetic tunnel junction (MTJ) which includes a Magnetic Tunnel Junction (MTJ) stack which has one of a crescent-shaped profile and an elbow-shaped profile in cross-section.