Abstract: A semiconductor device includes first and second substrates connected to each other. The second substrate includes a plate layer having first and second faces. Gate electrode layers are disposed on the first face of the plate layer. Channel structures extend through the gate electrode layers. Word-line cutting structures extend through the gate electrode layers and are spaced apart from each other. Via structures are disposed on the second face of the plate layer. Via connecting structures are disposed on the top face of the via structures. A width of the bottom face of each of the via structures is greater than a width of the top face of each of the via structures. A width of the bottom face of each of the via connecting structures is less than a width of the top face of each of the via connecting structures.

Abstract: A recorded master for manufacturing an information storage medium includes a master substrate; a heat absorption layer coated on the master substrate and absorbing heat at a part on which a beam is irradiated; and a separation layer coated on the heat absorption layer, wherein according to a temperature distribution of the part on which the beam is irradiated on the heat absorption layer, a volume change occurs in at least one of the heat absorption layer and the separation layer.