Abstract: A surface emitting element includes: a substrate having a first surface and a second surface opposed to the first surface; an epitaxial growth layer including a first semiconductor layer that is of a first electrically conductive type, an active layer, and a second semiconductor layer that is of a second electrically conductive type sequentially stacked on the second surface by epitaxial growth, the epitaxial growth layer having distributions in thickness and resonator length; an electrode electrically coupled to the first semiconductor layer; a current injection region formed on a surface of the second semiconductor layer on side opposite to the substrate, the current injection region being electrically coupled to the second semiconductor layer and having light transparency; a first reflective layer formed on the first surface at a position corresponding to a predetermined thickness of the epitaxial growth layer, the first reflective layer including a curve mirror structure; and a second reflective layer for

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 ?, or at least 20 ?, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In—Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

Abstract: Vertical Cavity Surface Emitting Laser (VCSEL) configurations are disclosed. In a first example, the VCSEL includes a III-Nitride active region between a p-type III-Nitride layer and an n-type III-Nitride layer; and a curved minor on or above the p-type III-Nitride layer. The curved mirror can be formed in a III-Nitride layer or a Transparent Oxide (TO) material and enables the formation of a long VCSEL cavity that improves VCSEL lifetime, VCSEL output power, VCSEL power efficiency and VCSEL reliability. In a second example, the VCSEL has an active region with a high indium content. In a third example, the VCSEL is transparent.

Abstract: A sensing apparatus, an illumination system, and a data communication system including a Vertical Cavity Surface Emitting Laser (VCSEL) or VCSEL array.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 ?, or at least 20 ?, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation.