Abstract: The disclosed and claimed subject matter relates to selective thermal atomic layer etching with a novel series of halogen-free organic acids cycled with an oxidant as a co-reactant to etch metals.

Abstract: The disclosed and claimed subject matter relates to a ferroelectric device having a bottom electrode, a film comprising crystalline ferroelectric materials that include a mixture of hafnium oxide and zirconium oxide having a substantial (i.e., approximately 40% or more) or majority portion of the material in a ferroelectric phase as deposited, a top electrode, and methods for preparing and depositing these materials. The bottom electrode is thin and has low roughness. The ferroelectric device is back-end-of-line (BEOL) compatible as all process steps take place at a temperature of 400 degrees Celsius or less.

Abstract: The disclosed and claimed subject matter relates to selective thermal atomic layer etching with a novel series of halogen-free organic acids cycled with an oxidant as a co-reactant to etch metals.