Patents by Inventor Jarod C. Gagnon

Jarod C. Gagnon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • APPARATUS FOR PRINTING WIDE BANDGAP SEMICONDUCTOR MATERIALS
    Publication number: 20240047206
    Abstract: A method for printing a semiconductor material includes depositing a molten metal onto a substrate in an enclosed chamber to form a trace having a maximum height of 15 micrometers and/or a maximum width of 25 micrometers to 10 millimeters and/or a thin film having a maximum height of 15 micrometers. The method further includes reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material. The depositing the molten metal includes depositing a metal composition including the molten metal and an etchant or depositing the etchant separate from the molten metal in the enclosed chamber.
    Type: Application
    Filed: September 15, 2023
    Publication date: February 8, 2024
    Inventors: Jarod C. Gagnon, Michael J. Presley, Steven M. Storck, Jeffrey P. Maranchi
  • Method for printing wide bandgap semiconductor materials
    Patent number: 11823900
    Abstract: A method for printing a semiconductor material includes depositing a molten metal onto a substrate in an enclosed chamber to form a trace having a maximum height of 15 micrometers and/or a maximum width of 25 micrometers to 10 millimeters and/or a thin film having a maximum height of 15 micrometers. The method further includes reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material. The depositing the molten metal includes depositing a metal composition including the molten metal and an etchant or depositing the etchant separate from the molten metal in the enclosed chamber.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: November 21, 2023
    Assignee: The Johns Hopkins University
    Inventors: Jarod C. Gagnon, Michael J. Presley, Steven M. Storck, Jeffrey P. Maranchi, Korine A. Ohiri, Scott A. Shuler
  • QUILTED INSULATING DIVING GLOVE
    Publication number: 20230276877
    Abstract: A diving glove includes quilted material defining a plurality of pockets. Each of the pockets is filled with aerogel beads. The glove may be worn underneath a waterproof layer in a dry diving suit. The glove includes multiple seams dividing the pockets. The seams are located to maintain a distribution of beads across the glove that effectively insulates the wearer's hand and prevents the beads from impeding the wearer's manual dexterity. The glove includes a web portion extending across a back side of the fingers. The web portion can be used to create an enclosed space for insulating the wearer's fingers.
    Type: Application
    Filed: December 30, 2022
    Publication date: September 7, 2023
    Inventors: Michael H. Jin, Evan D. Jacque, Jarod C. Gagnon, Nathan J. Fairbanks, Drew P. Seker, Kenneth Bontje, Mark Bollong
  • METHOD FOR PRINTING WIDE BANDGAP SEMICONDUCTOR MATERIALS
    Publication number: 20210296124
    Abstract: A method for printing a semiconductor material includes depositing a molten metal onto a substrate in an enclosed chamber to form a trace having a maximum height of 15 micrometers and/or a maximum width of 25 micrometers to 10 millimeters and/or a thin film having a maximum height of 15 micrometers. The method further includes reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material. The depositing the molten metal includes depositing a metal composition including the molten metal and an etchant or depositing the etchant separate from the molten metal in the enclosed chamber.
    Type: Application
    Filed: June 4, 2021
    Publication date: September 23, 2021
    Inventors: Jarod C. Gagnon, Michael J. Presley, Steven M. Storck, Jeffrey P. Maranchi, Korine A. Ohiri, Scott A. Shuler
  • Method for printing wide bandgap semiconductor materials
    Patent number: 11056338
    Abstract: A method for printing a semiconductor material includes depositing a molten metal onto a substrate in an enclosed chamber to form a trace having a maximum height of 15 micrometers, a maximum width of 25 micrometers to 10 millimeters, and/or a thin film having a maximum height of 15 micrometers. The method further includes reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: July 6, 2021
    Assignee: The Johns Hopkins University
    Inventor: Jarod C. Gagnon
  • METHOD FOR PRINTING WIDE BANDGAP SEMICONDUCTOR MATERIALS
    Publication number: 20200118816
    Abstract: A method for printing a semiconductor material includes depositing a molten metal onto a substrate in an enclosed chamber to form a trace having a maximum height of 15 micrometers, a maximum width of 25 micrometers to 10 millimeters, and/or a thin film having a maximum height of 15 micrometers. The method further includes reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material.
    Type: Application
    Filed: August 29, 2019
    Publication date: April 16, 2020
    Inventor: Jarod C. Gagnon