Abstract: A power semiconductor device is disclosed having a power semiconductor element with an upper and lower side, the upper side being located opposite to the lower side; a first and second electrode, and a housing, wherein the power semiconductor element is arranged between the first and second electrode such, that the upper side comprises a first contact portion being in contact with the first electrode and a first free portion not being in contact with the first electrode, and wherein the lower side at least comprises a second contact portion being in contact with the second electrode, and wherein a channel is provided fluidly connecting at least a part of the first free portion with a predetermined degassing point of the housing for guiding an overpressure, which overpressure results from plasma and/or gas occurring in a failure mode, from the first free portion to the predetermined degassing point.

Abstract: High frequency power diode including a semiconductor wafer having first and second main sides, a first layer of a first conductivity type formed on the first main side, a second layer of a second conductivity type formed on the second main side and a third layer of the second conductivity type formed between the first layer and the second layer. The first layer has a dopant concentration decreasing from 1019 cm?3 or more adjacent to the first main side of the wafer to 1.5·1015 cm?3 or less at an interface of the first layer with the third layer. The second layer has a dopant concentration decreasing from 1019 cm?3 or more adjacent to the second main side of the wafer to 1.5·1015 cm?3 at an interface of the second layer with the third layer and the third layer has a dopant concentration of 1.5·1015 cm?3 or less.

Abstract: A power semiconductor device is disclosed having a power semiconductor element with an upper and lower side, the upper side being located opposite to the lower side; a first and second electrode, and a housing, wherein the power semiconductor element is arranged between the first and second electrode such, that the upper side comprises a first contact portion being in contact with the first electrode and a first free portion not being in contact with the first electrode, and wherein the lower side at least comprises a second contact portion being in contact with the second electrode, and wherein a channel is provided fluidly connecting at least a part of the first free portion with a predetermined degassing point of the housing for guiding an overpressure, which overpressure results from plasma and/or gas occurring in a failure mode, from the first free portion to the predetermined degassing point.

Abstract: High frequency power diode including a semiconductor wafer having first and second main sides, a first layer of a first conductivity type formed on the first main side, a second layer of a second conductivity type formed on the second main side and a third layer of the second conductivity type formed between the first layer and the second layer. The first layer has a dopant concentration decreasing from 1019 cm?3 or more adjacent to the first main side of the wafer to 1.5.1015 cm?3 or less at an interface of the first layer with the third layer. The second layer has a dopant concentration decreasing from 1019 cm?3 or more adjacent to the second main side of the wafer to 1.5.1015 cm?3 at an interface of the second layer with the third layer and the third layer has a dopant concentration of 1.5.1015 cm?3 or less.

Abstract: A multilayer semiconductor element with improved dynamic electric parameters obtained by a suitable geometric arrangement of the control zone and by the use of a controlled emitter.