Patents by Inventor Jasmine Cheng

Jasmine Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8148219
    Abstract: A circuit with dielectric thicknesses is presented that includes a low-pass filter including one or more semiconductor devices having a thick gate oxide layer, while further semiconductor devices of the circuit have thin gate oxide layers. The low-pass filter semiconductor device includes an N-type substrate, a P-type region formed on the N-type substrate, a thick gate oxide layer formed over the P-type region, a P+ gate electrode formed over the thick gate oxide layer and coupled to a first voltage supply line, and P+ pick-up terminals formed in the P-type region adjacent the gate electrode and coupled to a second voltage supply line. The low-pass filter semiconductor device acts as a capacitor, whereby a gate-to-substrate voltage is maintained at less than zero volts to maintain a stable control voltage for the circuit.
    Type: Grant
    Filed: June 15, 2009
    Date of Patent: April 3, 2012
    Assignee: Broadcom Corporation
    Inventors: Derek Tam, Jasmine Cheng, Jungwoo Song, Takayuki Hayashi
  • Publication number: 20090253240
    Abstract: A circuit with dielectric thicknesses is presented that includes a low-pass filter including one or more semiconductor devices having a thick gate oxide layer, while further semiconductor devices of the circuit have thin gate oxide layers. The low-pass filter semiconductor device includes an N-type substrate, a P-type region formed on the N-type substrate, a thick gate oxide layer formed over the P-type region, a P+ gate electrode formed over the thick gate oxide layer and coupled to a first voltage supply line, and P+ pick-up terminals formed in the P-type region adjacent the gate electrode and coupled to a second voltage supply line. The low-pass filter semiconductor device acts as a capacitor, whereby a gate-to-substrate voltage is maintained at less than zero volts to maintain a stable control voltage for the circuit.
    Type: Application
    Filed: June 15, 2009
    Publication date: October 8, 2009
    Applicant: Broadcom Corporation
    Inventors: Derek Tam, Jasmine Cheng, Jungwoo Song, Takayuki Hayashi
  • Patent number: 7547956
    Abstract: A circuit with dielectric thicknesses is presented that includes a low-pass filter including one or more semiconductor devices having a thick gate oxide layer, while further semiconductor devices of the circuit have thin gate oxide layers. The low-pass filter semiconductor device includes an N-type substrate, a P-type region formed on the N-type substrate, a thick gate oxide layer formed over the P-type region, a P+ gate electrode formed over the thick gate oxide layer and coupled to a first voltage supply line, and P+ pick-up terminals formed in the P-type region adjacent the gate electrode and coupled to a second voltage supply line. The low-pass filter semiconductor device acts as a capacitor, whereby a gate-to-substrate voltage is maintained at less than zero volts to maintain a stable control voltage for the circuit.
    Type: Grant
    Filed: October 28, 2004
    Date of Patent: June 16, 2009
    Assignee: Broadcom Corporation
    Inventors: Derek Tam, Jasmine Cheng, Jungwoo Song, Takayuki Hayashi
  • Publication number: 20050087839
    Abstract: A circuit with dielectric thicknesses is presented that includes a low-pass filter including one or more semiconductor devices having a thick gate oxide layer, while further semiconductor devices of the circuit have thin gate oxide layers. The low-pass filter semiconductor device includes an N-type substrate, a P-type region formed on the N-type substrate, a thick gate oxide layer formed over the P-type region, a P+ gate electrode formed over the thick gate oxide layer and coupled to a first voltage supply line, and P+ pick-up terminals formed in the P-type region adjacent the gate electrode and coupled to a second voltage supply line. The low-pass filter semiconductor device acts as a capacitor, whereby a gate-to-substrate voltage is maintained at less than zero volts to maintain a stable control voltage for the circuit.
    Type: Application
    Filed: October 28, 2004
    Publication date: April 28, 2005
    Inventors: Derek Tam, Jasmine Cheng, Jungwoo Song, Takayuki Hayashi
  • Patent number: 6828654
    Abstract: In a low-pass filter for a phase locked loop (PLL) circuit, a capacitor formed by an N-type substrate, a P-type region formed on the N-type substrate, a thick oxide formed over the P-type region, a P+ gate electrode formed over the thick oxide and coupled to a first voltage supply line, and P+ pick-up terminals formed in the P-type region adjacent the gate electrode and coupled to a second voltage supply line, whereby a gate-to-substrate voltage is maintained at less than zero volts to maintain a stable control voltage for the PLL.
    Type: Grant
    Filed: December 27, 2001
    Date of Patent: December 7, 2004
    Assignee: Broadcom Corporation
    Inventors: Derek Tam, Jasmine Cheng, Jungwoo Song, Takayuki Hayashi
  • Publication number: 20030124810
    Abstract: In a low-pass filter for a phase locked loop (PLL) circuit, a capacitor formed by an N-type substrate, a P-type region formed on the N-type substrate, a thick oxide formed over the P-type region, a P+ gate electrode formed over the thick oxide and coupled to a first voltage supply line, and P+ pick-up terminals formed in the P-type region adjacent the gate electrode and coupled to a second voltage supply line, whereby a gate-to-substrate voltage is maintained at less than zero volts to maintain a stable control voltage for the PLL.
    Type: Application
    Filed: December 27, 2001
    Publication date: July 3, 2003
    Applicant: Broadcom Corporation
    Inventors: Derek Tam, Jasmine Cheng, Jungwoo Song, Takayuki Hayashi