Abstract: A packaged device adapter assembly for use with high density integrated circuit packages, e.g., micro lead frame packages, micro lead chip carriers, quad flat no lead packages, and micro ball grid array packages, etc., includes an alignment structure for aligning a packaged device therein.

Abstract: A handheld cardiac rhythm management device for use by a patient to request status information from an implantable pulse generating device and to request that the pulse generating device provide a rhythm altering shock to the patient's heart. The device includes a plurality of deadfront status indicator lamps on a front of a case that are visible to the patient when the controller is held in the patient's hand. The device also includes buttons on the front of the case and a telemetry circuit for bi-directional communication with the implantable pulse generating device.

Abstract: A spreadsheet application provides a rich programming and modeling environment. The spreadsheet application of the present invention does this by recognizing a new “object” data type in addition to the conventional spreadsheet data types: numbers, text, date, Boolean, and error. The object data type can be used to create an instance of an external object and store the object in a cell of a spreadsheet. Once an object has been created in a spreadsheet, the object can be invoked or accessed from any other cell or formula in the spreadsheet. The spreadsheet application of the present invention provides several special object functions that operate to enable a user to create and invoke an object. A user can directly call functions from objects that are installed on a local or remote machine, by integrating an object function within a spreadsheet formula. Thus, the user is provided with a tool for integrating outside data services into a spreadsheet and may take advantage of pre-existing objects.

Abstract: A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices such as a magnetoresistive memory cell includes two ferromagnetic layers and an antiferromagnetic coupling layer separating the two ferromagnetic layers. The SAF free layer has weakly coupled regions formed in the antiferromagnetic coupling layer by a treatment such as annealing, layering of the antiferromagnetic coupling layer, or forming the antiferromagnetic coupling layer over a roughened surface of a ferromagnetic layer. The weakly coupled regions lower the flop field of the SAF free layer in comparison to untreated SAF free layers. The SAF flop is used during the write operation of such a structure and its reduction results in lower power consumption during write operations and correspondingly increased device performance.

Abstract: A cladded conductive interconnect for programming a magnetoresistive memory device which includes a conductive material with a length, a first barrier conductive material positioned on the conductive material, and a multi-layer cladding region positioned along the length of the conductive material wherein the multi-layer cladding region includes N ferromagnetic layers, where N is a whole number greater than or equal to two, and wherein the multi-layer cladding region further includes at least one spacer layer, wherein the spacer layer can include a metal, an insulator, or an exchange interaction material, and wherein the spacer layer is sandwiched therebetween each adjacent ferromagnetic layer.

Abstract: A magnetoresistive tunneling junction memory cell comprises a magnetoresistive tunneling barrier (16), a bit magnetic region (15), a reference magnetic region (17), and current lines (20, 30) for inducing an applied magnetic field in the bit and reference magnetic regions. The bit magnetic region has a bit magnetic moment (43, 40,1425, 1625, 1950, 2315) that has a polarity in a bit easy axis (59, 1435) when there is no applied magnetic field. The tunneling barrier and the bit and reference magnetic regions form a magnetoresistive tunneling junction device (10, 72, 73, 74, 75, 76). In some implementations (73, 74, 75), the reference magnetic region has a reference magnetic moment (40, 1430, 1440, 1920, 1925) that is non-parallel to the bit easy axis. In other implementations (76), the reference magnetic region has a magnetization vortex (2310) with a net reference magnetic moment that is essentially zero.

Abstract: Methods of fractionating unmilled psyllium seed husk to obtain a compressible, gel-forming polysaccharide with a reduced gelation rate and improved swell volume. The gel-forming fraction isolated by the present invention is useful for administration to humans to normalize bowel function, reduce human serum cholesterol levels, and regulate blood glucose levels. The gel-forming polysaccharide also exhibits reduced allergenicity as compared to psyllium seed husk.

Abstract: A magnetoresistive tunneling junction memory cell (10) including a pinned ferromagnetic region (17) having a magnetic moment vector (47) fixed in a preferred direction in the absence of an applied magnetic field wherein the pinned ferromagnetic region has a magnetic fringing field (96), an electrically insulating material positioned on the pinned ferromagnetic region to form a magnetoresistive tunneling junction (16), and a free ferromagnetic region (15) having a magnetic moment vector (53) oriented in a position parallel or anti-parallel to that of the pinned ferromagnetic region wherein the magnetic fringing field is chosen to obtain a desired switching field.

Abstract: A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.

Abstract: A latching mechanism for selectively retaining a closure having a striker is provided that includes a housing forming a vertically extending groove for receiving the striker, first and second axles located on opposite sides of the groove, a striker spring located at the groove, a pawl pivotable about the first axle and defining a notch, and a ratchet pivotable about the second axle and defining a protrusion adapted to cooperate with the notch of the pawl to selectively retain the ratchet in a locked position. The ratchet defines a pocket for receiving the striker and retaining the striker in the groove when the ratchet is in the locked position. The housing is adapted to accept an over slam force from the striker at a bottom end of the groove. Preferably, the striker spring is substantially in-line with a path of the striker into the groove.

Abstract: A cladded conductive interconnect for programming a magnetoresistive memory device which includes a conductive material with a length, a first barrier conductive material positioned on the conductive material, and a multi-layer cladding region positioned along the length of the conductive material wherein the multi-layer cladding region includes N ferromagnetic layers, where N is a whole number greater than or equal to two, and wherein the multi-layer cladding region further includes at least one spacer layer, wherein the spacer layer can include a metal, an insulator, or an exchange interaction material, and wherein the spacer layer is sandwiched therebetween each adjacent ferromagnetic layer.

Abstract: A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.

Abstract: A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.

Abstract: A scalable magnetoresistive tunneling junction memory cell comprising a fixed ferromagnetic region having a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, an electrically insulating material positioned on the fixed ferromagnetic region to form a magnetoresistive tunneling junction, and a free ferromagnetic region having a magnetic moment vector oriented in a position parallel or anti-parallel to that of the fixed ferromagnetic region. The free ferromagnetic region includes N ferromagnetic layers that are anti-ferromagnetically coupled, where N is an integer greater than or equal to two. The number N of ferromagnetic layers can be adjusted to increase the effective magnetic switching volume of the MRAM device.

Abstract: A magnetoelectronics element (40) is provided that is comprised of a first magnetic layer (42), a first tunnel barrier layer (44) on the first magnetic layer (42), a second magnetic layer (46) on the first tunnel barrier layer (44) and a stressed over-layer (48) on the second magnetic layer (46), which is configured to alter a switching energy barrier of the second magnetic layer (46).

Abstract: Upon receipt of the hierarchical data structure, a shape tree is constructed corresponding to the hierarchical data structure. The shape tree is an intermediate data structure containing only one unique node for each element of the hierarchical data structure. After the shape tree is constructed, it is annotated with properties describing the hierarchical relationships between elements of the hierarchical data structure. The annotated shape tree is used to create the structure of the flat data structure. Once the shape tree is annotated, the column names for the flat data structure are built utilizing the annotated shape tree. With the column names built, data is emitted from the hierarchical data structure into the proper columns and rows of the flat data structure.

Abstract: A magnetoelectronics element (40) is provided that is comprised of a first magnetic layer (42), a first tunnel barrier layer (44) on the first magnetic layer (42), a second magnetic layer (46) on the first tunnel barrier layer (44) and a stressed over-layer (48) on said second magnetic layer (46), which is configured to alter a switching energy barrier of said second magnetic layer (46).

Abstract: A spreadsheet application provides a rich programming and modeling environment. The spreadsheet application of the present invention does this by recognizing a new “object” data type in addition to the conventional spreadsheet data types: numbers, text, date, Boolean, and error. The object data type can be used to create an instance of an external object and store the object in a cell of a spreadsheet. Once an object has been created in a spreadsheet, the object can be invoked or accessed from any other cell or formula in the spreadsheet. The spreadsheet application of the present invention provides several special object functions that operate to enable a user to create and invoke an object. A user can directly call functions from objects that are installed on a local or remote machine, by integrating an object function within a spreadsheet formula. Thus, the user is provided with a tool for integrating outside data services into a spreadsheet and may take advantage of pre-existing objects.

Abstract: A heat sink assembly having a base formed through an injection molding process utilizing high conductivity plastic in which both the heat pipe and the cooling fins are over-molded into the base to form an integral assembly. The heat pipe is of known construction that operates to transfer heat from a source to a remote location for dissipation. The cooling fins are preferably of the folded fin array configuration and are embedded into the top surface of the heat sink base. A cooling fan can be mounted to the assembly to draw air across the folded fin array for dissipation of the heat conducted efficiently from the heat pipe into the heat sink, including the folded fin array. The thermal resistance of the heat sink is improved as the interface resistance and the spreading resistance between the heat pipe and the cooling fins are substantially reduced.