Patents by Inventor Jason Abt
Jason Abt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11214874Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.Type: GrantFiled: June 19, 2020Date of Patent: January 4, 2022Assignee: TECHINSIGHTS INC.Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
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Publication number: 20200318242Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.Type: ApplicationFiled: June 19, 2020Publication date: October 8, 2020Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
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Patent number: 10689763Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.Type: GrantFiled: December 14, 2016Date of Patent: June 23, 2020Assignee: TECHINSIGHTS INC.Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
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Patent number: 10550480Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.Type: GrantFiled: December 14, 2016Date of Patent: February 4, 2020Assignee: TECHINSIGHTS INC.Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
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Publication number: 20170096741Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.Type: ApplicationFiled: December 14, 2016Publication date: April 6, 2017Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
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Publication number: 20170089813Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.Type: ApplicationFiled: December 14, 2016Publication date: March 30, 2017Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
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Patent number: 9534299Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.Type: GrantFiled: November 9, 2012Date of Patent: January 3, 2017Assignee: TECHINSIGHTS INC.Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
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Patent number: 8219940Abstract: A method and apparatus to reduce occurrences of electrically non-functional elements, known as dummy features, from a source data structure is described. The source data structure may be image data, a vector based data structure or some other data format. Dummy features in the source data structure are detected and then deleted. Dummy features may be detected by selecting a representative dummy feature, using it as a reference pattern or polygon and comparing it to features in the source data structure. The step of comparing the selected reference to the comprises selecting a cut-off correlation threshold value, and computing the correlation coefficients between the reference and the feature. Features are selectively removed based on a comparison between their correlation coefficients and the selected cut-off correlation threshold value. This threshold value may require updating to remove all dummy features in the source data structure.Type: GrantFiled: July 6, 2005Date of Patent: July 10, 2012Assignee: Semiconductor Insights Inc.Inventors: Mohammed Ouali, Jason Abt, Edward Keyes, Vyacheslav Zavadsky
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Patent number: 7886258Abstract: A method and apparatus to reduce occurrences of electrically non-functional elements, known as dummy features, from a source data structure is described. The source data structure may be image data, a vector based data structure or some other data format. Dummy features in the source data structure are detected and then deleted. Dummy features may be detected by selecting a representative dummy feature, using it as a reference pattern or polygon and comparing it to features in the source data structure. The step of comparing the selected reference to the comprises selecting a cut-off correlation threshold value, and computing the correlation coefficients between the reference and the feature. Features are selectively removed based on a comparison between their correlation coefficients and the selected cut-off correlation threshold value. This threshold value may require updating to remove all dummy features in the source data structure.Type: GrantFiled: June 15, 2010Date of Patent: February 8, 2011Assignee: Semiconductor Insights, Inc.Inventors: Mohammed Ouali, Jason Abt, Edward Keyes, Vyacheslav Zavadsky
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Patent number: 7873203Abstract: The present invention involves a computationally efficient method of determining the locations of standard cells in an image of an IC layout. The initial step extracts and characterizes points of interest of the image. A coarse localization of possible standard cell locations is performed and is based on a comparison of the points of interest of an instance of an extracted standard cell and the remaining points of interest in the image. A more rigid comparison is made on the list of possible locations comprising a coarse match and a fine match. The coarse match results in a shortlist of possible locations. The fine match performs comparisons between the template and the shortlist. Further filtering is done to remove the effects of noise and texture variations and statistics on the results are generated to achieve the locations of the standard cells on the IC layout.Type: GrantFiled: August 29, 2008Date of Patent: January 18, 2011Assignee: Semiconductor Insights Inc.Inventors: Vyacheslav L. Zavadsky, Val Gont, Edward Keyes, Jason Abt, Stephen Begg
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Publication number: 20100257501Abstract: A method and apparatus to reduce occurrences of electrically non-functional elements, known as dummy features, from a source data structure is described. The source data structure may be image data, a vector based data structure or some other data format. Dummy features in the source data structure are detected and then deleted. Dummy features may be detected by selecting a representative dummy feature, using it as a reference pattern or polygon and comparing it to features in the source data structure. The step of comparing the selected reference to the comprises selecting a cut-off correlation threshold value, and computing the correlation coefficients between the reference and the feature. Features are selectively removed based on a comparison between their correlation coefficients and the selected cut-off correlation threshold value. This threshold value may require updating to remove all dummy features in the source data structure.Type: ApplicationFiled: June 15, 2010Publication date: October 7, 2010Applicant: Semiconductor Insights Inc.Inventors: Mohammed OUALI, Jason Abt, Edward Keyes, Vyacheslav Zavadsky
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Patent number: 7765517Abstract: A method and apparatus to reduce occurrences of electrically non-functional elements, known as dummy features, from a source data structure is described. The source data structure may be image data, a vector based data structure or some other data format. Dummy features in the source data structure are detected and then deleted. Dummy features may be detected by selecting a representative dummy feature, using it as a reference pattern or polygon and comparing it to features in the source data structure. The step of comparing the selected reference to the comprises selecting a cut-off correlation threshold value, and computing the correlation coefficients between the reference and the feature. Features are selectively removed based on a comparison between their correlation coefficients and the selected cut-off correlation threshold value. This threshold value may require updating to remove all dummy features in the source data structure.Type: GrantFiled: October 24, 2007Date of Patent: July 27, 2010Assignee: Semiconductor Insights Inc.Inventors: Mohammed Ouali, Jason Abt, Edward Keyes, Vyacheslav Zavadsky
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Patent number: 7751643Abstract: The present invention provides a method and apparatus for reducing uneven brightness in an image from a particle based image system. This uneven brightness is most often seen as regions of shadow, but may also be seen as regions of over brightness. In cases where the uneven brightness is in the form of shadowing, the method corrects for the shadowy regions by first identifying the area of shadow, obtaining brightness information from a region near the shadow, where the brightness is optimal, applying statistical methods to determine the measured brightness as a regression function of the optimal brightness, and number and proximity of shadowy objects, then correcting the shadow area brightness by calculating the inverse of the function of the shadow brightness. With this method, the brightness within the shadowy or over brightness regions are corrected to appear at a substantially similar level of brightness as the region of optimal brightness in the image.Type: GrantFiled: August 12, 2004Date of Patent: July 6, 2010Assignee: Semiconductor Insights Inc.Inventors: Vyacheslav L. Zavadsky, Jason Abt
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Patent number: 7693348Abstract: A method of registering and vertically aligning multiply-layered images into a mosaic is described. The method comprises performing an iterative process of vertical alignment of layers into a mosaic using a series of defined alignment correspondence pairs and global registration of images in a layer using a series of defined registration correspondence points and then redefining the identified alignment correspondence pairs and/or registration correspondence points until a satisfactory result is obtained. Optionally, an initial global registration of each layer could be performed initially before commencing the alignment process. The quality of the result could be determined using a least squares error minimization or other technique.Type: GrantFiled: August 10, 2005Date of Patent: April 6, 2010Assignee: Semiconductor Insights Inc.Inventors: Vyacheslav Zavadsky, Jason Abt, Mark Braverman, Edward Keyes, Vladimir Martincevic
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Patent number: 7643665Abstract: The present invention involves a computationally efficient method of determining the locations of standard cells in an image of an IC layout. The initial step extracts and characterizes points of interest of the image. A coarse localization of possible standard cell locations is performed and is based on a comparison of the points of interest of an instance of an extracted standard cell and the remaining points of interest in the image. A more rigid comparison is made on the list of possible locations comprising a coarse match and a fine match. The coarse match results in a shortlist of possible locations. The fine match performs comparisons between the template and the shortlist. Further filtering is done to remove the effects of noise and texture variations and statistics on the results are generated to achieve the locations of the standard cells on the IC layout.Type: GrantFiled: August 31, 2004Date of Patent: January 5, 2010Assignee: Semiconductor Insights Inc.Inventors: Vyacheslav L. Zavadsky, Val Gont, Edward Keyes, Jason Abt, Stephen Begg
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Patent number: 7580557Abstract: The present invention involves a computationally efficient method of determining the locations of standard cells in an image of an IC layout. The initial step extracts and characterizes points of interest of the image. A coarse localization of possible standard cell locations is performed and is based on a comparison of the points of interest of an instance of an extracted standard cell and the remaining points of interest in the image. A more rigid comparison is made on the list of possible locations comprising a coarse match and a fine match. The coarse match results in a shortlist of possible locations. The fine match performs comparisons between the template and the shortlist. Further filtering is done to remove the effects of noise and texture variations and statistics on the results are generated to achieve the locations of the standard cells on the IC layout.Type: GrantFiled: August 29, 2008Date of Patent: August 25, 2009Assignee: Semiconductor Insights Inc.Inventors: Vyacheslav L. Zavadsky, Val Gont, Edward Keyes, Jason Abt, Stephen Begg
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Publication number: 20080317327Abstract: The present invention involves a computationally efficient method of determining the locations of standard cells in an image of an IC layout. The initial step extracts and characterizes points of interest of the image. A coarse localization of possible standard cell locations is performed and is based on a comparison of the points of interest of an instance of an extracted standard cell and the remaining points of interest in the image. A more rigid comparison is made on the list of possible locations comprising a coarse match and a fine match. The coarse match results in a shortlist of possible locations. The fine match performs comparisons between the template and the shortlist. Further filtering is done to remove the effects of noise and texture variations and statistics on the results are generated to achieve the locations of the standard cells on the IC layout.Type: ApplicationFiled: August 29, 2008Publication date: December 25, 2008Inventors: Vyacheslav L. Zavadsky, Val Gont, Edward Keyes, Jason Abt, Stephen Begg
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Publication number: 20080317328Abstract: The present invention involves a computationally efficient method of determining the locations of standard cells in an image of an IC layout. The initial step extracts and characterizes points of interest of the image. A coarse localization of possible standard cell locations is performed and is based on a comparison of the points of interest of an instance of an extracted standard cell and the remaining points of interest in the image. A more rigid comparison is made on the list of possible locations comprising a coarse match and a fine match. The coarse match results in a shortlist of possible locations. The fine match performs comparisons between the template and the shortlist. Further filtering is done to remove the effects of noise and texture variations and statistics on the results are generated to achieve the locations of the standard cells on the IC layout.Type: ApplicationFiled: August 29, 2008Publication date: December 25, 2008Inventors: Vyacheslav L. Zavadsky, Val Gont, Edward Keyes, Jason Abt, Stephen Begg
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Publication number: 20080123996Abstract: A method of registering and vertically aligning multiply-layered images into a mosaic is described. The method comprises performing an iterative process of vertical alignment of layers into a mosaic using a series of defined alignment correspondence pairs and global registration of images in a layer using a series of defined registration correspondence points and then redefining the identified alignment correspondence pairs and/or registration correspondence points until a satisfactory result is obtained. Optionally, an initial global registration of each layer could be performed initially before commencing the alignment process. The quality of the result could be determined using a least squares error minimization or other technique.Type: ApplicationFiled: October 31, 2007Publication date: May 29, 2008Inventors: Vyacheslav Zavadsky, Jason Abt, Mark Braverman, Edward Keyes, Vladimir Martincevic
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Publication number: 20080059920Abstract: A method and apparatus to reduce occurrences of electrically non-functional elements, known as dummy features, from a source data structure is described. The source data structure may be image data, a vector based data structure or some other data format. Dummy features in the source data structure are detected and then deleted. Dummy features may be detected by selecting a representative dummy feature, using it as a reference pattern or polygon and comparing it to features in the source data structure. The step of comparing the selected reference to the comprises selecting a cut-off correlation threshold value, and computing the correlation coefficients between the reference and the feature. Features are selectively removed based on a comparison between their correlation coefficients and the selected cut-off correlation threshold value. This threshold value may require updating to remove all dummy features in the source data structure.Type: ApplicationFiled: October 24, 2007Publication date: March 6, 2008Applicant: Semiconductor Insights Inc.Inventors: Mohammed Ouali, Jason Abt, Edward Keyes, Vyacheslav Zavadsky