Patents by Inventor Jason ACKERT

Jason ACKERT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High power photodiode
    Patent number: 12787477
    Abstract: In some implementations, a photodiode includes a waveguide layer of a first semiconductor material. The photodiode may include a first ion-implantation region, in the first semiconductor material, that is doped to exhibit a first conductivity type. The photodiode may include a mesa, of a second semiconductor material, on the waveguide layer. The first ion-implantation region may be set back from a section of an edge of a bottom surface of the mesa. The photodiode may include a second ion-implantation region, in the second semiconductor material, that is doped to exhibit a second conductivity type. The second ion-implantation region may extend from a top surface of the mesa, down a portion of a sloped sidewall of the mesa, and to the edge of the bottom surface of the mesa.
    Type: Grant
    Filed: November 30, 2023
    Date of Patent: November 3, 2026
    Assignee: Lumentum Technology UK Limited
    Inventors: Jason Ackert, Chengkun Chen, Marcel G. Boudreau
  • HIGH POWER PHOTODIODE
    Publication number: 20250081662
    Abstract: In some implementations, a photodiode includes a waveguide layer of a first semiconductor material. The photodiode may include a first ion-implantation region, in the first semiconductor material, that is doped to exhibit a first conductivity type. The photodiode may include a mesa, of a second semiconductor material, on the waveguide layer. The first ion-implantation region may be set back from a section of an edge of a bottom surface of the mesa. The photodiode may include a second ion-implantation region, in the second semiconductor material, that is doped to exhibit a second conductivity type. The second ion-implantation region may extend from a top surface of the mesa, down a portion of a sloped sidewall of the mesa, and to the edge of the bottom surface of the mesa.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 6, 2025
    Inventors: Jason ACKERT, Chengkun CHEN, Marcel G. BOUDREAU