Abstract: Various embodiments herein relate to methods and apparatus for depositing doped and undoped silicon-containing films having a high degree of purity. In one example, the method includes exposing the substrate to a first reactant and a second reactant; reacting the first and second reactants with one another to form a silicon-containing material and depositing a portion of the silicon-containing film on the substrate; before the silicon-containing film is complete, performing an impurity reduction operation including: (i) generating a plasma from a plasma generation gas comprising inert gas and hydrogen, where the plasma generation gas is substantially free of oxygen, and (ii) exposing the substrate to the plasma to thereby reduce a concentration of fluorine, carbon, hydrogen, and/or nitrogen in the silicon-containing film; and repeating these operations (or a subset thereof) until the silicon-containing film is deposited to a final thickness.

Abstract: Methods and apparatuses for depositing dielectric films into features on semiconductor substrates are described herein. Methods involve depositing dielectric films by using controlled thermal chemical vapor deposition, with periodic passivation operations and densification to modulate film properties.

Abstract: Methods of depositing silicon oxide on carbon-based films on a substrate involve adsorbing a silicon-containing reactant on the substrate surfaces, generating oxygen radicals from N2O, and exposing the adsorbed silicon-containing reactant to the oxygen radicals to form a silicon oxide film. In some embodiments, the carbon-based films form features having sidewalls. The methods result in low carbon loss and substantially vertical sidewalls. Embodiments of the methods are performed at high temperatures that facilitate high quality deposition.