Abstract: A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt 528 with respect to the gas flow equalizer plate 520.

Abstract: A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt 528 with respect to the gas flow equalizer plate 520.

Abstract: Process kits for use in a semiconductor process chambers have been provided herein. In some embodiments, a process kit for a semiconductor process chamber includes a body configured to rest about a periphery of a substrate support and having sidewalls defining an opening corresponding to a central region of the substrate support. A lip extends from the sidewalls of the body into the opening, wherein a portion of an upper surface of the lip is configured to be disposed beneath a substrate during processing. A first distance measured between opposing sidewalls of the body is greater than a width across the upper surface of a substrate to be disposed within the opening by at least about 7.87 mm.