Abstract: A method of forming a read head. The method includes forming first and second read sensors. A first read measurement is performed on a storage medium using the first read sensor. A second read measurement is performed on the storage medium using the second read sensor. Based on a comparison of the first and second read measurements to a predetermined quantity, either the first read sensor or the second read sensor is selected to be operational in a data storage device.

Abstract: A method of forming a read head. The method includes forming first and second read sensors. A first read measurement is performed on a storage medium using the first read sensor. A second read measurement is performed on the storage medium using the second read sensor. Based on a comparison of the first and second read measurements to a predetermined quantity, either the first read sensor or the second read sensor is selected to be operational in a data storage device.

Abstract: Assemblies and methods that include a flex circuit having a slider facing surface and an opposing back surface; a slider having a back surface and an opposing air bearing surface (ABS), the slider including an electrical connection region; and a through circuit electrical connection, that is in electrical connection with the electrical connection region of the slider, the back surface of the slider interfacing with the slider facing surface of the flex circuit.

Abstract: Assemblies and methods that include a flex circuit having a slider facing surface and an opposing back surface; a slider having a back surface and an opposing air bearing surface (ABS), the slider including an electrical connection region; and a through circuit electrical connection, that is in electrical connection with the electrical connection region of the slider, the back surface of the slider interfacing with the slider facing surface of the flex circuit.

Abstract: An apparatus and associated method are generally directed to a magnetic sensor. A sensor may have a stack with an air bearing surface (ABS) and a biasing surface opposite the ABS. A biasing yoke can be disposed between a biasing magnet and the stack with the biasing magnet having a lower magnet moment than the biasing yoke.

Abstract: An apparatus and associated method are generally directed to a magnetic sensor. A sensor may have a stack with an air bearing surface (ABS) and a biasing surface opposite the ABS. A biasing yoke can be disposed between a biasing magnet and the stack with the biasing magnet having a lower magnet moment than the biasing yoke.

Abstract: The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

Abstract: The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

Abstract: The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

Abstract: The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

Abstract: The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

Abstract: In one aspect of the present invention, a non-volatile latching element is provided that includes one or more magnetic elements therein. By programming the magnetic elements to appropriate resistance values, the latching element assumes a pre-programmed state upon power up. The magnetic elements are preferably programmed using either a one or two layer word line. In another aspect of the present invention, the magnetic elements are formed as pseudo-spin valve structures utilizing only CoFe as the active ferromagnetic layers, with one ferromagnetic layer thinner than the other. This simplifies the design while maintaining the high moment material to achieve large GMR ratios.

Abstract: A non-volatile latch having a power supply terminal and a ground terminal is disclosed. The non-volatile latch includes a pair of cross-coupled inverter elements each having a power supply terminal and a ground terminal. Magneto-resistive elements are interposed between the power supply terminals of both cross-coupled inverter elements and the power supply terminal of the non-volatile latch. In addition, magneto-resistive elements are interposed between the ground terminals of both cross-coupled inverter elements and the ground terminal of the non-volatile latch. By including magneto-resistive elements in each supply line, the effects of transistor parameter variation can be minimized.

Abstract: In one aspect of the present invention, a non-volatile latching element is provided that includes one or more magnetic elements therein. By programming the magnetic elements to appropriate resistance values, the latching element assumes a pre-programmed state upon power up. The magnetic elements are preferably programmed using either a one or two layer word line. In another aspect of the present invention, the magnetic elements are formed as pseudo-spin valve structures utilizing only CoFe as the active ferromagnetic layers, with one ferromagnetic layer thinner than the other. This simplifies the design while maintaining the high moment material to achieve large GMR ratios.