Patents by Inventor Jason Bakos

Jason Bakos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Driver circuit for gallium nitride (GaN) heterojunction field effect transistors (HFETs)
    Patent number: 8054110
    Abstract: A driver circuit and integrated circuit implementation of a driver circuit for driving a GaN HFET device is disclosed. The driver circuit includes a resonant drive circuit having an LC circuit with an inductance and a capacitance. The capacitance of the LC circuit includes the gate-source capacitance of the GaN HFET device. The driver circuit further includes a level shifter circuit configured to receive a first signal and to amplify the first signal to a second signal suitable for driving a GaN HFET device. The resonant drive circuit is controlled based at least in part on the second signal such that the resonant drive circuit provides a first voltage to the GaN HFET device to control the GaN HFET device to operate in a conducting state and to provide a second voltage to the GaN HFET device to control the GaN HFET device to operate in a non-conducting state.
    Type: Grant
    Filed: January 20, 2010
    Date of Patent: November 8, 2011
    Assignee: University of South Carolina
    Inventors: Bo Wang, Antonello Monti, Jason Bakos, Marco Riva
  • DRIVER CIRCUIT FOR GALLIUM NITRIDE (GaN) HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFETs)
    Publication number: 20110025397
    Abstract: A driver circuit and integrated circuit implementation of a driver circuit for driving a GaN HFET device is disclosed. The driver circuit includes a resonant drive circuit having an LC circuit with an inductance and a capacitance. The capacitance of the LC circuit includes the gate-source capacitance of the GaN HFET device. The driver circuit further includes a level shifter circuit configured to receive a first signal and to amplify the first signal to a second signal suitable for driving a GaN HFET device. The resonant drive circuit is controlled based at least in part on the second signal such that the resonant drive circuit provides a first voltage to the GaN HFET device to control the GaN HFET device to operate in a conducting state and to provide a second voltage to the GaN HFET device to control the GaN HFET device to operate in a non-conducting state.
    Type: Application
    Filed: January 20, 2010
    Publication date: February 3, 2011
    Applicant: UNIVERSITY OF SOUTH CAROLINA
    Inventors: Bo Wang, Antonello Monti, Jason Bakos, Marco Riva