Abstract: An electronic display may include a touch sensing system configured to perform touch sensing in an active area of the electronic display and display driver circuitry configured to program display pixels of the active area to emit light. The electronic display may also include the active area. The active area may include a first portion and a second portion that are at least partially electrically separated. The display driver circuitry may program the display pixels in the first portion while the touch sensing circuitry may perform touch sensing in the second portion.

Abstract: An electronic display may include a touch sensing system configured to perform touch sensing in an active area of the electronic display and display driver circuitry configured to program display pixels of the active area to emit light. The electronic display may also include the active area. The active area may include a first portion and a second portion that are at least partially electrically separated. The display driver circuitry may program the display pixels in the first portion while the touch sensing circuitry may perform touch sensing in the second portion.

Abstract: A touch sensor panel is disclosed. The touch sensor panel includes a first layer including a plurality of electrodes of a first type that are coupled to respective traces and are configured to operate as touch sensing electrodes during a first time period. The touch sensor panel also includes a second layer including a plurality of electrodes of a second type overlapping with the respective traces of the electrodes of the first type. The electrodes of the second type are configured to operate as guard electrodes for the respective traces of the electrodes of the first type during the first time period and operate as touch sensing electrodes during a second time period.

Abstract: Disclosed herein are structures, devices, and methods for sensing physical parameters, such as strain in a surface, using resistance-based parameter sensors and current sensing. An applied strain can cause a differential change in one or more currents from two resistors configured in parallel in the sensor. Strain can be inferred from a ratio of the difference of the two currents to a sum of the two currents. These structures and methods can be adapted to measure strain or other parameters using an array of sensors, with common voltages applied to rows of the array, and currents being summed in column in the array so that fewer receivers are needed.

Abstract: A touch sensor panel is disclosed. The touch sensor panel includes a first layer including a plurality of electrodes of a first type that are coupled to respective traces and are configured to operate as touch sensing electrodes during a first time period. The touch sensor panel also includes a second layer including a plurality of electrodes of a second type overlapping with the respective traces of the electrodes of the first type. The electrodes of the second type are configured to operate as guard electrodes for the respective traces of the electrodes of the first type during the first time period and operate as touch sensing electrodes during a second time period.

Abstract: Disclosed herein are structures, devices, and methods for sensing physical parameters, such as strain in a surface, using resistance-based parameter sensors and current sensing. An applied strain can cause a differential change in one or more currents from two resistors configured in parallel in the sensor. Strain can be inferred from a ratio of the difference of the two currents to a sum of the two currents. These structures and methods can be adapted to measure strain or other parameters using an array of sensors, with common voltages applied to rows of the array, and currents being summed in column in the array so that fewer receivers are needed.

Abstract: Noise in sensor panel measurements can be reduced using a common pixel correction algorithm. Noise can be introduced into touch or force sensor panel measurements, for example, by circuitry of a transmit (Tx) section or a receive (Rx) section coupled to one or more sensing nodes of a sensor panel. For example, a digital-to-analog converter in the transmit section or an analog-to-digital converter in the receive section can introduce low-frequency correlated noise. Additionally, transmit and receive sections can introduce uncorrelated noise into the system. Reference nodes, coupled between Tx and Rx sections, can sense correlated and uncorrelated noise from the Tx and Rx sections. The noise measured at reference nodes can be subtract from signals measured at other sensing nodes coupled to the same Rx channel. The measurement at the reference node can be scaled using a scaling parameter to account for differences between reference nodes and sensing nodes.

Abstract: Noise in sensor panel measurements can be reduced using a common pixel correction algorithm. Noise can be introduced into touch or force sensor panel measurements, for example, by circuitry of a transmit (Tx) section or a receive (Rx) section coupled to one or more sensing nodes of a sensor panel. For example, a digital-to-analog converter in the transmit section or an analog-to-digital converter in the receive section can introduce low-frequency correlated noise. Additionally, transmit and receive sections can introduce uncorrelated noise into the system. Reference nodes, coupled between Tx and Rx sections, can sense correlated and uncorrelated noise from the Tx and Rx sections. The noise measured at reference nodes can be subtract from signals measured at other sensing nodes coupled to the same Rx channel. The measurement at the reference node can be scaled using a scaling parameter to account for differences between reference nodes and sensing nodes.

Abstract: Amplifier circuits and methods are implemented using a variety of different embodiments. According to one such embodiment, a method is implemented using a field-effect transistor (FET) having a gate node, a source node and a drain node. A first circuit state is implemented in which the gate node, the source node and the drain node are connected to inputs that generate a stored charge at the gate node, the amount of stored charge at the gate node being responsive to a first voltage level. A second circuit state is implemented in which the drain node is connected to a voltage source, the source node is connected to a load, and while charge at the gate node is preserved, current between the drain node to the source node drives a voltage level of the load to a proportionally amplified version of the first voltage level.

Abstract: Amplifier circuits and methods are implemented using a variety of different embodiments. According to one such embodiment, a method is implemented using a field-effect transistor (FET) having a gate node, a source node and a drain node. A first circuit state is implemented in which the gate node, the source node and the drain node are connected to inputs that generate a stored a charge at the gate node, the amount of stored charge at the gate node being responsive to a first voltage level. A second circuit state is implemented in which the drain node is connected to a voltage source, the source node is connected to a load, and while charge at the gate node is preserved, current between the drain node to the source node drives a voltage level of the load to a proportionally amplified version of the first voltage level.

Abstract: Amplifier circuits and methods are implemented using a variety of different embodiments. According to one such embodiment, an amplifier circuit is implemented to amplify a first signal to drive an output load. The circuit has a field-effect transistor (FET) with a gate, a source and a drain. A switch arrangement is coupled to the gate, the source and the drain. State control logic provides state information for a first state and a second state. In the first state, the first switch arrangement connects the first signal to the gate and connects the drain and source to reference voltages. In the second state, the switch arrangement disconnects the first signal from the gate, connects the drain to a voltage supply and connects the source to the output load, thereby causing the FET to operate in source-follower mode.