Abstract: Embodiments of the present invention are directed to a metallization process for reducing the stress existing between the Al—Cu layer and the titanium nitride (TiN) layer, and solving the galvanic problem. The process does so by cooling the wafer in the vacuum apparatus where the metallization process is performed after formation of the Al—Cu layer and before the formation of the TiN layer. In accordance with an aspect of the present invention, a metallization process comprises placing a wafer in an Al—Cu sputtering chamber to form an Al—Cu layer on the wafer, and transferring the wafer to a titanium nitride sputtering chamber. An inert gas is introduced into the titanium nitride sputtering chamber to cool the wafer. A titanium nitride layer is formed on the Al—Cu layer of the wafer in the titanium nitride sputtering layer after cooling the wafer.

Abstract: A method of smoothing an inter-metal dielectric layer in a semiconductor device for reducing formation of voids. The method comprises the steps of: providing a semiconductor substrate with metal lines formed thereon; forming a first dielectric layer on the surface of the semiconductor substrate, covering the metal lines; forming a pre-planarization layer, with high fluidity and good gap-fill capacity, on the first dielectric layer; forming a spin-on layer on the pre-planarization layer; etching back the spin-on layer until exposing the pre-planarization layer; and forming a second dielectric layer on the pre-planarization layer and the spin-on layer. Furthermore, an IMD structure fabricated via the method is also disclosed.

Abstract: Embodiments of the present invention are directed to a metallization process for reducing the stress existing between the Al—Cu layer and the titanium nitride (TiN) layer, and solving the galvanic problem. The process does so by cooling the wafer in the vacuum apparatus where the metallization process is performed after formation of the Al—Cu layer and before the formation of the TiN layer. In accordance with an aspect of the present invention, a metallization process comprises placing a wafer in an Al—Cu sputtering chamber to form an Al—Cu layer on the wafer, and transferring the wafer to a titanium nitride sputtering chamber. An inert gas is introduced into the titanium nitride sputtering chamber to cool the wafer. A titanium nitride layer is formed on the Al—Cu layer of the wafer in the titanium nitride sputtering layer after cooling the wafer.

Abstract: A method for measuring the parameter of a rough film is presented in this invention. In which the optical property of a rough film is further defined by utilizing the characteristics of an optical instrument and silicon film, without disturbance from noise in measurement. Therefore, good or bad the rough film is can be detected effectively, further, a handy method can be offered to control the stability in the manufacturing process. The invention is performed by choosing a measuring light with wavelength in a certain range and an optical instrument, then comparing the result with a standard value to monitor the result of the manufacturing process of the rough film.

Abstract: A method for determining a crack limit of a target film deposited on a wafer in production after a post annealing procedure is disclosed. The crack limit is determined by adopting and adjusting the thermal shrinkage rates of a plurality of target films deposited on bare wafers and annealed. The test results on bare wafers can be applied to the production wafers to prevent from film cracking and/or inspect instrumental conditions.

Abstract: A method for preventing a target film deposited on a wafer in production from cracking after a post annealing procedure is disclosed. The method is performed by previously determining a crack limit before the target film is deposited on the wafer in production. The crack limit is determined by adopting and adjusting the thermal shrinkage rates of a plurality of target films deposited on bare wafers and annealed. After the crack limit is determined, a system-adjusting step and a reconfirmation step are performed, if necessary, to make sure the system conditions determined by the test results on bare wafers are suitably applied to the production wafers to prevent from film cracking. Moreover, the instrumental conditions can be inspected and tuned accordingly.