Patents by Inventor Jason Chien-Sung Chu

Jason Chien-Sung Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bottom oxide formation process for preventing formation of voids in trench
    Patent number: 6974749
    Abstract: Embodiments of the present invention are directed to a method of forming a bottom oxide layer in the trench in semiconductor devices, such as Double-Diffused Metal-Oxide Semiconductor (DMOS) devices. In one embodiment, a method of forming a bottom oxide layer in a trench structure comprises providing a semiconductor substrate; forming a silicon nitride layer on the semiconductor substrate; forming a first oxide layer on the silicon nitride layer; forming a trench structure in the semiconductor substrate; forming a second oxide layer on a bottom and sidewalls of the trench and on a surface of the first oxide layer; removing the first oxide layer and the second oxide layer on the surface of the silicon nitride layer; and removing the second oxide layer on the sidewalls of the trench and a portion of the second oxide layer on the bottom of the trench.
    Type: Grant
    Filed: October 1, 2003
    Date of Patent: December 13, 2005
    Assignee: Mosel Vitelic, Inc.
    Inventors: Shih-Chi Lai, Yifu Chung, Yi-Chuan Yang, Jen-Chieh Chang, Jason Chien-Sung Chu, Chun-De Lin
  • Bottom oxide formation process for preventing formation of voids in trench
    Publication number: 20040203217
    Abstract: Embodiments of the present invention are directed to a method of forming a bottom oxide layer in the trench in semiconductor devices, such as Double-Diffused Metal-Oxide Semiconductor (DMOS) devices. In one embodiment, a method of forming a bottom oxide layer in a trench structure comprises providing a semiconductor substrate; forming a silicon nitride layer on the semiconductor substrate; forming a first oxide layer on the silicon nitride layer; forming a trench structure in the semiconductor substrate; forming a second oxide layer on a bottom and sidewalls of the trench and on a surface of the first oxide layer; removing the first oxide layer and the second oxide layer on the surface of the silicon nitride layer; and removing the second oxide layer on the sidewalls of the trench and a portion of the second oxide layer on the bottom of the trench.
    Type: Application
    Filed: October 1, 2003
    Publication date: October 14, 2004
    Applicant: MOSEL VITELIC, INC.
    Inventors: Shih-Chi Lai, Yifu Chung, Yi-Chuan Yang, Jen-Chieh Chang, Jason Chien-Sung Chu, Chun-De Lin